International Journal of Electronics and Communication Engineering. ISSN 0974-2166 Volume 4, Number 3 (2011), pp. 267-274 © International Research Publication House http://www.irphouse.com Design Consideration and Effect of Parameter Variation on sub-40nm Bulk MOSFET using TCAD Tool 1 S. Intekhab Amin, 2 M.S. Alam and 3 Ruqaiya Khanam 1 Department of Electronics & Communication Engineering, M.R.C.E., Faridabad-121001, Haryana, India E-mail: intekhabamin@gmail.com 2 Department of Electronics Engineering, Z.H.C.E.T., Aligarh Muslim University, Aligarh-202002, U.P., India E-mail: m_s_alam@rediffmail.com 3 Department of Electronics & Communication Engineering, Lingaya’s University, Faridabad, Haryana, India E-mail: ruqaiya.alig@yahoo.com Abstract The scaling of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been governed over past several decades and is now becoming very critical due to its scaling limit and its short channel effects (SCE).In this paper several design consideration and the effects of various process parameters variation on the device performance is carried out for sub-40nm engineered MOSFET. Virtual Fabrication of sub-40nm Bulk MOSFET is carried out under channel engineering and source drain engineering process. These structures enable more aggressive device scaling in nano-scale region because of their ability to control short channel effects. How ever during scaling the junction depth should also be scaled down, which increases parasitic resistance so silicidation technique has been applied to reduce their effects on device. The variation of process parameters such as effects of well implantation, epitaxial doping, channel doping, oxide thickness and channel length on threshold voltage on device performance is carried out and also source drain concentration, and implantation energy on its junction depth and the effect of annealing temperature on sheet resistance is also investigated. Silvaco TCAD Tool is used for Virtual fabrication and simulation. ATHENA process simulator is used for virtual fabrication and ATLAS device simulator is used for device characterization and to study the effects of different process parameters on the device performance