The Investigation of Chemical Shift of Silicon X-ray Energy in Different Stoichiometry or Structure with Microcalorimeter EDS LiLung Lai 1 , Matthew H. Carpenter 2 , Robin Cantor 2 , Hideo Naito 3 1. Semiconductor Manufacturing International (Shanghai) Corp, SH, China 2. STAR Cryoelectronics, Santa Fe, NM, USA 3. H.K.N. Inc. Nanotechnology Marketing, CA, USA The ultra-high X-ray energy resolution down to 3 eV full-width at half-maximum (FWHM) of the STAR Cryoelectronics MICA-1600 Microcalorimeter (Cal) Energy Dispersive X-ray Spectrometer (EDS) [1] provides more detailed spectral information than conventional semiconductor EDS, from 1 st generation of Si(Li) detectors to current 2 nd generation silicon drift detectors, which have typical energy resolutions around 125 eV. The modern Cal-EDS has sufficient resolution to investigate chemical shifts, which so far has only been available by soft X-ray[2], WDS (or EPMA)-in-SEM and (Electron) EELS-in-STEM. Now, the development of Cal-EDS is the 3 rd generation of EDS [3], combining the speed and ease of use of EDS with resolution closer to WDS. We have used the MICA-1600 [4,5] to investigate the chemical-dependent energy shift of the silicon (Si) K X-ray emission induced by different stoichiometry, such as SiO2, Si3N4 and CoSiX; or structure, like crystalline vs. poly-crystalline Si. The mechanism of the shifting of the X-ray peak energy [6] is the variable chemical bond energy of electrons in the single atom or molecule. The shift of peak position in the X-ray spectrum can reflect the crystal structure around the probed element or the process to make the materials. Figure 1 shows the normalized spectra for Si K (~1.740 keV) and Si K (~1.837 keV) lines of different sample states of Si. The K intensity of X-ray signal is more than 10 times the K and exhibits a more significant chemical shift. Table 1 summarizes the samples measured and the fitted peak shifts of the Si K and K peaks relative to crystalline Si. This makes it possible to establish a table of X-ray peak positions for different silicon states and then deduce the conditions of silicon compounds and structures made by different processes or from different starting materials. In the future, Cal-EDS application to SiGe made with different compositions of Ge or made with different process recipes might be valuable for in-line process monitoring and advanced technology development. References: [1] D.A. Wollman et al., Elec. Dev. Fail. Anal. News, Vol. 2(4), (2000), 1 [2] M. Terauchi et al., Microsc & Microanalysis 20 (2014), 692-697 [3] Dale E. Newbury, Microsc & Microanalysis 12 (2006), 527-537 432 doi:10.1017/S1431927616003019 Microsc. Microanal. 22 (Suppl 3), 2016 © Microscopy Society of America 2016 https://doi.org/10.1017/S1431927616003019 Downloaded from https://www.cambridge.org/core. IP address: 34.231.180.130, on 16 Feb 2022 at 01:16:15, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms.