Dislocation scattering effect on two-dimensional electron gas transport in an GaN/AlGaN modulation-doped heterostructure Sibel Gökden Balikesir University, Department of Physics, Balikesir-Turkey *Corresponding Author: e-mail: sozalp@balikesir.edu.tr PACS 72.20.Dp, 73.40.Kp Abstract. We present the effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, remote and background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in AlGaN/GaN modulation doped-heterostructures. The most important scattering mechanisms limiting electron transport are identified. From the calculated dependence of mobility on temperature, it is clear that dislocation scattering dominates the low temperature mobility of two- dimensional (2D) electrons in GaN/AlGaN structures with a high electron density n s >10 12 cm -2 and the maximum 2DEG mobilities will be in the 10 2 -10 4 cm 2 /V.s range for dislocation density of 4x10 10 cm -2 and carrier densities in the 1x10 12 – 2x10 13 cm -2 . This theoretical calculations are fairly agree with the same mobility value obtained by the experimental for 4x10 10 cm -2 dislocation density. The results are compared to the transport to quantum lifetime ratios due to charge dislocations. We find that the ratio is larger for dislocation scattering than for impurity scattering. INTRODUCTION The wide band gap semiconductors have attracted great interest for possible insertion in future high power, high frequency electronics applications. [1-3]. GaN and its alloys with AlN are currently under investigation as candidate materials for high power, high temperature microelectronic devices [4-6]. Compared with their technological applications, partly due to poor material quality fundamental research in nitrides, particularly in electronic transport, appears to be in its infancy. For example the rapid advance in fabricating high quality sub-μm III-nitride modulation doped field effect transistors [7] calls for reliable and predictive device simulations. While published