UCC Library and UCC researchers have made this item openly available. Please let us know how this has helped you. Thanks! Title Electro-optic properties of GaInAsSb/GaAs quantum well for high- speed integrated optoelectronic devices Author(s) Thoma, Jiri; Liang, Baolai; Reyner, Charles; Ochalski, Tomasz J.; Williams, David P.; Hegarty, Stephen P.; Huffaker, Diana L.; Huyet, Guillaume Publication date 2013 Original citation Thoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120. doi: 10.1063/1.4775371 Type of publication Article (peer-reviewed) Link to publisher's version http://aip.scitation.org/doi/abs/10.1063/1.4775371 http://dx.doi.org/10.1063/1.4775371 Access to the full text of the published version may require a subscription. Rights © 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Reyner, C., Ochalski, T., Williams, D., Hegarty, S. P., Huffaker, D. and Huyet, G. (2013) 'Electro-optic properties of GaInAsSb/GaAs quantum well for high- speed integrated optoelectronic devices', Applied Physics Letters, 102(1), pp. 013120 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4775371 Item downloaded from http://hdl.handle.net/10468/4291 Downloaded on 2021-11-26T00:41:23Z