147 BUITEMS Quality & Excellence in Education Charged-based Deep Level Transient Spectroscopy (Q-DLTS) setup J. App. Em. Sc Vol 4, Issue 2, December 2013 Characterization of ZnO by mean of I-V Measurement of respective Schottky diode by DLTS Muhammad Noor ul Huda Khan Asghar 1,2,3 , Zaheer Abbas Gilani 1 , Irshad Ahmad 4 , Yi Tan 2,3 1 Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta, 2 School of Materials Science and Engineering, Dalian University of Technology, Dalian, China, 3 Key Laboratory for Solar Energy photo voltaic system of Liaoning province, Dalian, China, 4 Government. Technical Training Institute, Multan. Abstract Zinc Oxide (ZnO) was studied through deep level transient spectroscopy (DLTS). The current- voltage(C-V) characteristics of Schottky diode were analyzed through standard method, which is available in DLTS system. The C-V measurements of ZnO were performed at different temperatures under identical biasing circumstances. On the bases of these characteristics the behavior of the material was studied in detail and listed in the following: The ideality factor of ZnO was calculated to be 2.2183 at room temperature, observed to increase with decreasing temperature of the material. The higher value of ideality factor was attributed to high diffusion or tunneling current. The barrier height of ZnO was calculated as 0.640eV, which decreased with decrease in temperature. The change in the barrier height was related to the effective leakage current at high temperature. Reverse saturation current calculated for ZnO was found to be 7.531μA and the calculated values are found to decrease at lower temperatures. Keywords: Semiconducting zinc oxide materials, I-V characteristics, Deep level transient spectroscopy (DLTS) of the material, schottky diode Corresponding author’s email: noorulhudakhan@gmail.com INTRODUCTION Here has been a large deal of attention in zinc oxide (ZnO) semiconductor material, which is an efficient oxide material, considered over numerous decades due to its massive applications in diversity of fields. It has been used for coatings in thin film of photovoltaic cells (Budianu et al., 2002), antireflective coatings in conventional silicon solar cells (Dimova et al., 1999), light emitting diodes (Soki et al., 2000), thin film transistors (Asghar et al., 2013). owing to its exceptional conduction method based on oxygen vacancies, it is extensively used in oxygen gas sensors (Lampe et al.,1989), A single crystal aluminum nitride (AlN) wafer surface has been studied with the help of a newly unique software-based mechanism, (Rothenberger et al., 2012). Current-voltage, capacitance-voltage characteristics, admittance spectra, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation (Polyakov et al., 2007). ZnO has an exclusive arrangement of piezoelectric, conduction and photo-optical based properties (Zu et al., 1997). Currently, it has been well thought-out as an alternative to GaN because of its excellent properties, that is: (1) a large excitonic binding energy (which is almost 60 meV), (2) less power thresholds for optical pumping at normal temperature and (3) tunable band gap energy within the range 2.8 to 3.3 eV and 3.3 to 4 eV with CdO doped (Zu et al., 1997) and MgO (Heo et al., 2005) correspondingly. The large excitonic binding energy (almost 60 m eV) of ZnO makes it well matched for developing ultra violet light source and transparent electronic materials. Due to considerable large band gap and relatively saturated drift velocity, III–V compound semiconductors are rapidly becoming critical materials for a variety of