                S. J. CASTILLO 1 , M. C. ACOSTAENRÍQUEZ 1 , MA. E. ZAYAS 1 , H. ARIZPE 1 , T. MENDÍVIL REYNOSO 1 , A. GARCIAJUÁREZ 1 , M. E. ALVAREZRAMOS 2 AND E. LARIOS RODRÍGUEZ 3,4 1 Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5088, CP. 83000, Hermosillo, Sonora, México. 2 Departamento de Física, Universidad de Sonora, Apdo. Postal 1626, CP. 83000, Hermosillo, Sonora, México. 3 Departamento de Investigación en Polímeros y Materiales, Universidad de Sonora, CP. 83000, Hermosillo, Sonora, México. 4 Departamento de Ingeniería Química de la Universidad de Sonora, CP. 83000, Hermosillo, Sonora, México. semiconductores@difus.uson.mx http://www.cifus.uson.mx   In the first part of this work was produced Zinc Oxide (ZnO) into a glass matrix by using the Sol Gel Technique at room temperature, these materials were prepared using tetraethyl orthosilicate (TEOS) as precursor, the Zn ions were added before the jellification step trough an aqueous solution of zinc acetate. These glasses were characterized by Xray diffraction, optic absorption, FTIR and Raman spectroscopy. The Xray patterns showed amorphousness. The optical absorption shows a shoulder in the UV range corresponding whit ZnO confined to the vitreous matrix. The spectra by FTIR show characteristic vibrations of SiOSi with interaction Zn +2 . Raman scattering let us to identify and precise the formation of the ZnO. In the second part of this work was immersed glass substrates into an aqueous chemical bath with external controlled temperature, the chemical solutions contained in the bath were a Zn Ions source (ZnSO 4 ) 0.1 M, a pH 10 Buffer solution (NH 4 Cl/NH 4 OH), Ethanolamine to complex the Zn ions, and pure water, resulting ZnO films hexagonally structured with energy band gap of 3.3 eV, growing 1000 nm during 25 minutes followed of 60 minutes to 75°C and 85°C in the same chemical reaction.  Glasses, Zn Ions, Zinc Oxide, SolGel Process, Thin Films, Chemical Bath Deposition and semiconductors  ! Zinc oxide has attracted a significant attention in the last decades because its wide band gap behavior which confers a host of potential applications in gas sensors [1], solar cells [2, 3], Catalysis [4], Organic light emitting diodes (OLEDs) [5], microelectronic devices how transistors [59], particularly a very interesting use of the ZnO is like electronic devices with highly nonlinear currentvoltage relationships called Varistors [1014]. At small applied electric fields, varistors are insulating; but at a fairly well defined higher field, those switch to conducting and maintain a nearly constant field over many decades or magnitude orders of current. Most commercial, and military application varistors are based on polycrystalline, semiconducting ZnO with a variety of other oxide additives typically in the molar range of 100 parts per million to several percent. Their main application is in electrical circuits to limit or regulate the voltage that can be applied to other devices or components. While it is common for varistors to operate with current densities of 10 3 to 10 A/cm 2 , some others applications also require unusually high electric fields near 40kV/cm. With these high power conditions, it is perhaps not surprising those small flaws in the varistor result in breakdown, or a large irreversible change in their electrical and sometimes structural properties. The functional dependence of current on voltage in these devices is symmetrically bipolar that is due to an inherent property of the semiconductor from which it is made. Several process using both chemical and physical methods have been reported for the production of these materials (ZnO and ZnOcomposites) like tape casting[14], solgel[1516], vaporphase transport WSEAS TRANSACTIONS on CIRCUITS and SYSTEMS S. J. Castillo, M. C. Acosta-Enriquez, Ma. E. Zayas, H. Arizpe, T. Mendivil-Reynoso, A. Garcia-Juarez, M. E. Alvarez-Ramos, E. Larios-Rodriguez ISSN: 1109-2734 143 Issue 3, Volume 9, March 2010