Japanese Journal of Applied Physics REGULAR PAPER Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate To cite this article: Lars Heuken et al 2019 Jpn. J. Appl. Phys. 58 SCCD11 View the article online for updates and enhancements. This content was downloaded from IP address 181.214.134.136 on 17/05/2019 at 23:42