An Astable Multivibrator Based on a Single Straintronic Magneto-tunneling Junction with a Two-Phase Multiferroic Soft Layer Md Ahsanul Abeed, Justine L. Drobitch and Supriyo Bandyopadhyay 1 Department of Electrical and Computer Engineering Virginia Commonwealth University, Richmond, VA 23284, USA There is tremendous interest in exploring nanomagnetic devices as potential replacements for transistors in information processing circuits and systems. A special class of nanomagnetic devices employ multiferroics whose magnetizations are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft layers are composed of two-phase multiferroics comprising a magnetostrictive layer elastically coupled to a piezoelectric layer. Here, we show that a single straintronic magneto-tunneling junction can act as an astable multivibrator or microwave relaxation oscillator (frequency > 1 GHz) whose traditional implementation would have required multiple transistors, capacitors and resistors. This reduces device footprint and improves device reliability. This is a new application of nanomagnetic devices where magnetic interactions (interaction between the shape anisotropy, strain anisotropy, dipolar coupling field and spin transfer torque in the soft layer of the s-MTJ) are exploited to reduce device footprint. I. INTRODUCTION Straintronics is the field of switching the magnetization of a magnetostrictive nanomagnet, elastically coupled to an underlying piezoelectric film, with mechanical strain generated by applying a small voltage across the piezoelectric. This phenomenon can be exploited to realize extremely energy-efficient binary switches and a host of other systems that dissipate miniscule amounts of energy to operate [1]. What is less known, however, is that these same systems have another striking advantage, namely, their device characteristics may allow for combining the functionalities of multiple traditional devices into one single element. That would reduce device count significantly in analog and digital circuits. Recently, it was shown theoretically that a single straintronic magneto-tunneling junction (s-MTJ), whose soft layer is a two-phase multiferroic composed of a magnetostrictive layer and a piezoelectric layer, can implement a ternary content-addressable memory cell [2] which would normally require 16 transistors to implement [3]. A 1 Corresponding author. Email: sbandy@vcu.edu