Supplementary Information Ambipolar, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating Irina Lokteva, Stefan Thiemann, Florentina Gannott and Jana Zaumseil * Institute of Polymer Materials, Friedrich-Alexander Universit¨ at Erlangen-N¨ urnberg, Martensstraße 7, D- 91058 Erlangen, Germany. E-mail: jana.zaumseil@ww.uni-erlangen.de Figure S1: Diameter distribution of PbSe NWs Figure S2: Transfer characteristics of the electrolyte-gated FET showing negligible gate leakage Figure S3: Transfer characteristics of the electrolyte-gated device versus gate and reference voltage Figure S4: Linear electron and hole mobilities for a Si/SiO 2 and electrolyte-gated PbSe NW-FET Figure S5: Transfer characteristics of an electrolyte-gated FET and corresponding mobilities calculated with constant specific capacitance C i = 3.4 μ F/cm 2 Figure S6: Voltage-dependent capacitance of PbSe NWs/[EMIM][FAP] interface by impedance measure- ments and corresponding mobilities Figure S7: Dynamic gate-displacement current measurements of an electrolyte-gated FET with corre- sponding gate-dependent capacitances and extracted mobilities Figure S8: Transfer characteristics of an electrolyte-gated device before and after hydrazine treatment Figure S9: FTIR spectra of the PbSe NWs before and after hydrazine treatment Figure S10: Output characteristics of an ion gel-gated FET 1 Electronic Supplementary Material (ESI) for Nanoscale This journal is © The Royal Society of Chemistry 2013