199 Work of This Research is Licensed under CC BY Abstract: Manufacture and characterization of this paper for nanorods ZnO based planar and vertical Schottky diodes is presented. The ZnO thin film was grown on n-Si- <100 > substrates by the hydrothermal process. The performance of the planner Pd/ZnO/Al and Pd/ZnO/Si/Ti/Al vertical diode configurations were analyses and compared. Palladium, titanium, and aluminum have been deposited by thermal evaporation use masks of metal. The crystalline structure and surface morphological details for thin films for ZnO nanorods were described by using (XRD) and (SEM). By applying voltage range from -2 V to 2 V Was measured (I-V) characteristics for two devices. The resulting data for both configurations show a typical exponential relationship between applied voltage and output current for the Schottky barrier diode. According to the measured I-V characteristics electrical parameters are extracted, for example, saturation current, ideality factor, barrier height, and rectification ratio. The simple low-cost nanorods Schottky diodes based on ZnO thin film make them a promising candidate in many electronics and optoelectronic applications. 1. Introduction Schottky diode is an important device of the metal-semiconductor junctions, which classify as rectifying (Schottky) contact and a non- rectifying (Ohmic) contact [1]. In 1938, the Schottky barrier (SB) model explained by the theory of Schottky-Mott. This the model assumed that the Schottky barrier formed based on the work function of metal (Φ  ) comparative to the electron affinity of the semiconductor () [2, 3]. The Schottky barrier established with n-type semiconductor-metal contact, if the work function of metal (Φ  ) greater than the work function of semiconductor (Φ  ) , Φ  >Φ  [3]. Zinc oxide is an intrinsical bandgap (3.37 eV) n-type wide- band semiconductor. The unique electrical and optoelectrical properties of ZnO make it a promising material in many electronic and optoelectronic applications. ZnO is environmentally friendly, cheap, large exaction binding energy (60 m eV), easy to fabricate, and thermally stable. Besides, it can easily procedure different nanostructures such as nanorods, nanoparticles, nanowires, and nanotubes [4]. Nanostructures ZnO has been fabricated by different physical and chemical deposition techniques [5]. Hydrothermal aqueous solution deposition technique is a very simple and tailorable way to achieve nanostructures ZnO [6, 7]. The ZnO Schottky diodes are an effective device for gas sensors, field-effect transistors, Ghusoon M. Ali 2 *Shahad T.Armoot 1 1) M.Sc., Student Electrical Engineering Department, Mustansiriyah University, Baghdad, Iraq. 2) Asst. Prof. Dr. , Electrical Engineering Department, Mustansiriyah University, Baghdad, Iraq. NANORODS ZnO THIN FILM GROWN BY HYDROTHERMAL METHOD BASED PLANAR AND VERTICAL PD/ZnO SCHOTTKY DIODE CONFIGURATIONS Journal of Engineering and Sustainable Development http://jeasd.uomustansiriyah.edu.iq https://doi.org/10.31272/jeasd.conf.1.22 *Corresponding author: shahadtalib73@gmail.com First Online Scientific Conference for Graduate Engineering Students June 2020