Available online at www.sciencedirect.com ScienceDirect Materials Today: Proceedings 11 (2019) 985–990 www.materialstoday.com/proceedings 2214-7853© 2018 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Multi- Conference on Computing, Communication, Electrical & Nanotechnology: Materials Science. I2CN_2018 Heterogeneous Dielectric gate technique to enhance the performance of InGaAs/InP trench MOSFET A.R. Supkar, S. S. Mohanty, S. Mishra, G. P. Mishra0F* Device Simulation Lab, Dept. of Electronics & Communication Engg. Institute of Technical Education & Research, Siksha 'O' Anusandhan deemed to be University, Khandagiri, Bhubaneswar-751030, India. Abstract Based on group III-V material, a new InGaAs/InP based Trench MOSFET has been proposed with heterogeneous dielectric gate, which exhibits a significant improvement of device parameters in terms of peak transconductance,on state resistance and effective mobility. Using 2D Sentaurus device simulator the proposed device structure shows approximately 82% improvement in peak transconductance, 92% reduction in on state resistance, 103% improvement in effective mobility as compared to SiO 2 dielectric gate © 2018 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Multi- Conference on Computing, Communication, Electrical & Nanotechnology: Materials Science. Keywords: Trench; In0.53Ga0.47As; InP ; transconductance; on state resistance. 1. Introduction In VLSI technology, with new innovation of device designs and sustainable development, silicon has been a preferred material for moderate voltage applications in semiconductor devices [1-2]. It has however reached its performance limits. Therefore research works are being carried out using group III-V materials for various applications. In 0.53 Ga 0.47 As/InP based material possesses higher electron mobility as compared to Silicon [3] which * Corresponding author. Tel.: +919437306597 E-mail address:gurumishra@soa.ac.in