Modern Physics Letters B Vol. 26, No. 8 (2012) 1250047 (10 pages) c  World Scientific Publishing Company DOI: 10.1142/S0217984912500479 CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR HATEF SADEGHI * , M. T. AHMADI, S. M. MOUSAVI and RAZALI ISMAIL Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM), 81310 Skudai, Johor Darul Takzim, Malaysia * hatef.sadeghi@gmail.com MAHDIAR H. GHADIRY Department of Computer Engineering, Arak Branch, Islamic Azad University, Arak, Iran Received 7 November 2011 Accepted 3 January 2012 In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell–Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments. Keywords : Conductance; trilayer graphene; model; bilayer graphene; FET. 1. Introduction Single-layer carbon atoms with hexagonal symmetry (known as Graphene mono- layer) was reported in early 2004. 1,2 Layers of graphene can be stacked differently depending on the horizontal shift of graphene planes. Every individual graphene multilayer sequence behaves like a new material in which different stacking of graphene sheet leads to different electronic properties. 3–5 Recently, unique prop- erties of mono- and few-layer graphene have attracted great attention, and have been proposed as promising candidates for the future nanoelectronics. Ballistic transport phenomenon at room temperature, anomalous quantum Hall effect and tunable band gap by applied perpendicular electric field and magnetic field have 1250047-1