International Journal of Research in Advanced Engineering and Technology 69 International Journal of Research in Advanced Engineering and Technology ISSN: 2455-0876; Impact Factor: RJIF 5.44 Received: 14-09-2019; Accepted: 16-10-2019 www.newengineeringjournal.in Volume 5; Issue 4; October 2019; Page No. 69-74 Characteristics and mechanism of transfer of current in multi-barrier arsenide gallium heterostructures Zoirova LKH 1 , Khashimova PHS 2 , Mardonova YO 3 , Abdiraxmonov USH 4 , Kulmamatova MM 5 1-5 Navoi State Mining Institute, Department, General physics, Navoi, Uzbekistan Abstract At the present stage, the development of optoelectronics and telecommunications systems involves studying the effects of the interaction between optical radiation and the electrons of a substance, and covers the problems of creating optoelectronic instruments in which these effects are used to generate, transmit, store and display information. The forthcoming tasks of optoelectronics and telecommunications systems are miniaturization of the element base, integration of elements and functions, orientation to special technologies and materials. Keywords: the photodiode, two-barrier, three-barrier, heterojunction, base area, modulation of base Introduction Extremely important and promising for heterostructure optoelectronics are those in which semiconductors with different band gap widths contact within a single structure. With the use of hetero-transitions, those instruments that cannot be obtained from homo-transitions are realized. Thus, in the homo p-n transition, the thickness of the transition region is practically impossible to form less than the diffusion length or to inject carriers in a given direction, redistribute the intensity of electric fields in the p- and n- regions, and control the absorption coefficient of photons. The distribution of electric field and potential in the region of spatial charge for hetero transition is the same as in the case of p-n transition, but with different values of dielectric constants for p- and n-regions. The functional dependence of the electric field and potential in the region of the spatial charge of the hetero-transition on the coordinate will be linear and quadratic, respectively, as in the case of the p-n transition. Different values of dielectric constants and lead to a jump of the electric field in the hetero-transition at the metallurgical boundary. In this case, according to Gauss 'theorem, that is, in Indian-containing heterolayers promising for optoelectronics, by changing the parameters of the regions forming the heterotransition, it is possible to control the functional properties of semiconductor devices based on it. At the same time due to correlation of thickness of photodetector heterolayer it is possible to reach area of maximum absorption for selected spectral working range. In this connection, the establishment of the physical nature of processes in the bulk charge regions of gallium arsenide- based hetero-transition and its compounds, as well as the study of the effect of rectifying barriers on the current and spectral characteristics of the three-barrier structure with different hetero-layer composition, is a pressing task. Degree of study of the problem To date, a large number of research papers have been accumulated on the electrophysical properties of hetero- transitions and heterostructures based on compounds A 3 B 5 , but they do not address the electronic processes that occur when two or three potential barriers to a particular hetero- transition are connected in sequence (e.g. AlGaInAs-GaAs). In particular, in works [1, 2] the dependence of electric characteristics of structures with Schottky's barrier on the basis of gallium arsenide from material of formation of a barrier of contact from Pd, Pd+Ni+W is studied and it is shown, that any metal-semiconductor interactions are responsible for distorting the electrical characteristics of Schottky barrier instruments [2] . Shows that the creation of a guard ring to the Schottky barrier results in the formation of an additional Schottky barrier between the metal and the p- type region connected in series to the p-n transition. As a result, most of the applied voltage is placed on the additional Schottky barrier. As noted in [3] , the creation of metal-semiconductor-metal rectifying contacts to the heterolayer GaInAs results in a strong non-uniformity of the electric field, resulting in a decrease in the speed of the photodiode MPM. On the basis of a research of photo- electric characteristics of three-barrier m 1 - n-p-m 1 - structures with a heterojunction of nAlGaAs-pGaAs [4] is shown that in the mode of locking of a heterojunction the coverage of quasineutral areas of a heterolayer a volume charge leads to increase in photosensitivity in visible area of a range 0.5-0.9 microns. Ways to achieve the stated goal - expansion of functional capabilities of semiconductor devices in known works are carried out in various ways. Large-scale works are carried out by the school of Zh.I. Alfyrov on the creation of effective semiconductor solar cells, LEDs, lasers, photodiodes by the use of hetero- transitions [5] . By introduction of constructive changes by S.V. Averin's group, N.M. Ushakov photodiode structures on the basis of transition metal semiconductor, metal- semiconductor-metal in which effects of strengthening of photocurrent and mechanisms of a tokoperenos are studied [3] are created. On the basis of integration of semiconductor p-n-transition and metal-semiconductor transition of A.V. Karimov group, studies of photodiode, transistor structures are carried out to reduce their dark currents, processes of modulation of basic areas with working voltage [6, 7] . In studying the properties of metal-semiconductor barriers