Accepted Manuscript A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour Shivendra Yadav, Dheeraj Sharma, Bandi Venkata Chandan, Mohd Aslam, Deepak Soni, Neeraj Sharma PII: S0749-6036(17)33027-6 DOI: 10.1016/j.spmi.2018.02.005 Reference: YSPMI 5497 To appear in: Superlattices and Microstructures Received Date: 26 December 2017 Revised Date: 3 February 2018 Accepted Date: 4 February 2018 Please cite this article as: S. Yadav, D. Sharma, B.V. Chandan, M. Aslam, D. Soni, N. Sharma, A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour, Superlattices and Microstructures (2018), doi: 10.1016/j.spmi.2018.02.005. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.