REVISTA MEXICANA DE FislCA -ItlSUPLEMENTO 2, 79-S3 NOVIEMBRE 2000 Preparation and characterizacion offunctional and non-functional nanocomposites U. Pal, J. García Serrano, A. Bautista Hernández, O. V;:ízquez Cuchillo, and E. AguiJa Almanza Instituto de Física, Unil'ersidad Autónoma de Puebla Apartado postal J.48, 72570 Puebla, Pue., Mexieo N. Koshizaki and T. Sasaki Natiollallllstitute of Materials ami Chemieal Researeh (NIMC) AlS7; MITl, 1./ Higashi, Tsukuba, Ibaraki 305, Japall. Recibido el 27 de ahril de 20(X); aceptado el 15de junio de 2000 Funclional nanocomposites like Si/ZnO. Au/ZnO and non.functional nanocomposites like Cu/SiOz were preparcd cithcr by r.r. co- sputtering or hy ion-implantation technique. The compositc Illms wcrc prcparcd with different composilions and thcrmally treated atdifferent tClllpcratures lo study the varialion 01' thcir oplical propcrties wilh cOlllposition and annealing temperature. X.ray diffraction (XRD), trans- Illission clcctron mkroscopy (TEM). and transmission elcctron diffraction (TED) techniques were used for their structural characterization. rormatioll of colJoidal metal particles and Ihe semiconduclor c1uslcrs in the matrix have been confirmed by TEM. TED and spectrophoto- lllctric measurements. KeYlI"orlis: Nanoparticlcs: melal and semiconductors; optical propcrties NnnocompósiloS funcionales lales como Si/ZnO. Au/ZnO y no-fullcionales como eu /Si0 2 fueron preparados por las técnicas de co- .\pu/t'I"ing d. o por implantación iónica. Las películas compósitas fueron preparadas con diferentes composiciones y Iratadas a diferentes temperaturas para estudiar la variación de sus propiedades 6pticas con su composición y temperatura del tratamiento. Se han usado las técnicas tales como difracción de rayos X (XRD). microscopía electrónica de transmisión (TEM) y difracción de electrones por transmisión (TED) para su carncterización estructural. Se han conllrmado la formación de partículas coloidales metálicas ycúmulos semiconductores en la matriz por mediciones dc TEM, TED Yespectrofotométricas. DescripTores: Nanopartículas; metales y semiconductores; propiedades óplicas rAes: 6i.46.+w; 6i.82.Rx; 78.66.Vs 1. Introductilln In recent ycars. the preparation and charactcrization 01' low dimensional semiconductor ami metal composiles have at- Iracled much interest due to their strong photolumincs- ccnce (PL) in Ihe visihle and ncar infrared (IR) regions [1-5]. ami non-linear optical properties [61 respectively. The semi- conductor uispcrsed nanocomposites have modofied optical properiles ¡¡mi are highly prosperous material s ror the fah- rication 01' optoelcctronic uevices and chemical sensors liT By incorporating semicnnductors in glass malrix in difTcrent ways. several optical functional composites have heen pre- pared and the mechanism 01' the origin nf optical functional- ities in thell1 are heing studieu extensivcly al present. How. cver, the use 01' fllnctional malrix materials like ZnO. MgO rol' the preparation 01' nanocomposiles is very recent IS-HII. On the othcr hand, incorporation of low dimensional metal particles in glass matrix lIsing several tcchniqlles is heing stlldicd to invcsligale lhe mechanism 01' lheir formatinn anu elTecl nI' post growth treatments on them. 111 thc prcscnt projcct. wc took the assignmcl1t lo )"'lIT. pare several fllnctional anJ non-functional nanocolllposites likc Si/2nO. AlI/ZnO, eu/SiO:.! etc. ami to stlldy lheir struc- (mal and optkal properties lo invcstigate their applicahility in optoelectronic devices and chemical sensors. Thollgh, apart frorn Ihe ahoye mcntioned thrce material s we are preparing other materials like Cu/ZnO, GaAs/SiO:.! etc. we will restrict ourselves 011 the discussion 01' only lhe previously mentioned three materials. 2. Experimental Si/2nO and Au/ZnOcornposite flIms wcrc preparcd on quartz glass suhstrates hy co-sputtcring 01' Si (5 x5x 0.3 rnrn 3 ) wafers or 3 pieces 01' Au (01' diffcrent lengths like 1 mm, :3 mm ami 7 lllm) wires ami ZnO (lOO mm diamcter) tar- gets with 100 \V r.f. power. ror Si/ZnO composites, lhe films were prepared al I()mTorr Al' pressure. Whcreas, lhe Au/ZnO compositcs \\'cre prep~lrcd al 4 mTorr Ar pressure. The con- Icnt 01' Si and Au in the nJllIS were varicd hy changing the numher 01' Si cO-largels or hy changing the length of Au wircs on Ihe ZnO larget, kceping the time 01' spultering fixed (60 minulcs). Tilc as-dcposilcd Si/ZnO compositc films wcrc anncaled al di!'!'crcnl Icmpera!ures (400-800°C) !'or5 hours in vacuutll (2 x 10-(; Ton) ami thc Au/ZnO compositc lilms werc annealed at ditTcrenl tcmperaturcs (320-iOO°C) in ar- gon atmosphere. Thc COJltcnt nI' Si and Au in the composite IiIms wcrc dctcnnined hy a Perkin.Elmcr (PHI 5óOOci) XPS