Japanese Journal of Applied Physics REGULAR PAPER Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method To cite this article: Mitsuru Sometani et al 2016 Jpn. J. Appl. Phys. 55 04ER11 View the article online for updates and enhancements. Related content Reliability study on positive bias temperature instability in SiC MOSFETs by fast drain current measurement Takuma Okunishi, Kenichi Hisada, Hisashi Toyoda et al. - Al-implanted on-axis 4H-SiC MOSFETs M Florentin, M Cabello, J Rebollo et al. - Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs Ron Green, Aivars Lelis and Daniel Habersat - Recent citations SiC MOSFET threshold-stability issues Aivars J. Lelis et al - Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric Patrick Fiorenza et al - Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model Xufang Zhang et al - This content was downloaded from IP address 144.173.6.94 on 01/01/2018 at 23:42