South Asian Journal of Engineering and Technology Vol.3, No.15 (2017) 1–11 1 Effect of Rinsing on Zn(O,S) Film Grown by Chemical Bath Deposition I. Hossen a , M. S. Rahman a *, K. M. A. Hussain b , M. J. Rashid a a) Dept. of Electrical and Electronic Engineering, University of Dhaka, Curzon Hall, High Court Street,, Dhaka 1000-1200, Bangladesh b) Experimental Physics Division, Atomic Energy Centre, Bangladesh Atomic Energy Commission, 4 Kazi Nazrul Islam Avenue, Ramna, Dhaka 1000, Bangladesh * Corresponding Author: M. S. Rahman Phone: +8801674987189; E-mail: mdsaifur.rahman.du@gmail.com Received: 08/02/2017, Revised: 05/04/2017 and Accepted: 25/05/2017 Abstract Zn(O,S) thin films are deposited by chemical bath deposition (CBD) method on soda lime glass using ammonia as a complexing agent as well as ZnSO 4 .2H 2 O (Zinc sulphate di hydrate) and NH 2 -SC-NH 2 (Thiourea) as a source of Zn 2+ and S 2- respectively. After the deposition, we investigated the influence of rinsing on two films. Afterwards the deposited films are studied by means of SEM, EDX, XRD, and UV-VIS spectrometry. With rinsing we successfully reduce the Zn(OH) 2 component from the films which is confirmed by the XRD results, though ZnS and ZnO components were still there. Through comparing the surface morphology, before and after rinsing, it is observed that rinsing made the surface less compact. Transmittance of the rinsed film is found higher than the non-rinsed film, ranging from 300 nm to 1000 nm. The bandgap values of two films are determined to 3.71eV and 3.94 eV, respectively for rinsed and without rinsed film. Keywords: ZnS; ZnO; Rinsing; Chemical Bath Deposition; Buffer layer