Indonesian Journal of Electrical Engineering and Computer Science Vol.11, No.1, July 2018, pp. 209~214 ISSN: 2502-4752, DOI: 10.11591/ijeecs.v11.i1.pp209-214  209 Journal homepage: http://iaescore.com/journals/index.php/ijeecs Effect of Deposition Temperature on Self-Catalyzed ZnO Nanorods via Chemical Vapour Deposition Method Shafinaz Sobihana Shariffudin, Puteri Sarah Mohamad Saad, Hashimah Hashim, Mohamad Hafiz Mamat NANO-Electronics Center, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450, Shah Alam, Selangor, Malaysia Article Info ABSTRACT Article history: Received Jan 29, 2018 Revised Mar 21, 2018 Accepted Apr 11, 2018 The morphological, structural, optical and electrical properties of ZnO nanorods are investigated as a function of deposition temperature. The ZnO nanorods were grown on ZnO seed catalyst layer at temperatures between 750 o C – 825 o C using thermal chemical vapour deposition method. Sample deposited at 825 o C showed the highest crystalline orientation. The FE-SEM micrographs and the intense peak along (002) direction in the XRD spectra of this sample implied that the nanorods possess c-axis orientation. PL spectra showed two common ZnO peaks which centered at 380 nm and 540 nm. Two-point probe I-V measurement revealed ohmic behaviour with the gold metal contact, whereby the current increase with the deposition temperature. Keywords: CVD method Self-catalyzed Temperature ZnO nanorods Copyright © 2018Institute of Advanced Engineering and Science. All rights reserved. Corresponding Author: Shafinaz Sobihana Shariffudin, NANO-Electronics Center, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450, Shah Alam, Selangor, Malaysia. Email: sobihana@salam.uitm.edu.my 1. INTRODUCTION Zinc oxide (ZnO) is a II-VI semiconductor compound with a direct band gap of E g = 3.37 eV (at room temperature) [1, 2] which makes it suitable for application of shortwave length optoelectronics devices, such as light emitting diode and laser diodes. ZnO has high excitation binding energy of 60 meV, which is three times larger than GaN (E b = 20 meV). This is the main advantage of ZnO as a light emitter, which permit excitonic recombination to dominate at room temperature [3]. ZnO is commonly available in white colour powder and has been used in so many products, such as in paints, ointments, adhesives, sealants, and many more not forgetting in many electronics devices. ZnO thin films are highly transparent in the visible wavelength, making it suitable for optoelectronics devices such as solar cells [4]. It has shown distinguished properties which are semiconducting, piezoelectric, and pyroelectric properties [6]. It is chemically and mechanically stable, non-toxic, and high abundant. ZnO nanostructures such as nanorods and nanoflowers [5] have been grown using many deposition methods. Among them are hydrothermal method [6], thermal chemical vapor deposition method [7], magnetron sputtering [8], electrochemical deposition [9] and many more. Among these methods, CVD has become one of the most favorable method to grow ZnO nanorods due to good crystalline structures of the samples. In a conventional vapour–liquid–solid (VLS) growth mechanism to grow the ZnO nanostructures, metals such as gold are used as the catalyst layer. Consequently, nanorods deposited by the VLS mechanism typically contain catalyst nanoparticles at their tips [10]. However the metal catalysts will unavoidably affect the purity of the products, and furthermore could affect the efficiency of electronics devices [11, 12]. According to Wang et.al [13], metal catalysts are not necessary needed during the growth process of the ZnO