Abstract—Titanium dioxide has wide area of applications ranging from CMOS to photocatalyst upto self cleaning glass and solar panels. The Sol-Gel spin coating technique is most attractive technique due to its so many advantages such as easy preparation method, less complicating instruments and less time consuming. The Sol-Gel spin coating was successfully used for doped TiO 2 thin films deposition on silicon wafer followed by annealing processes. TiO 2 thin films were deposited on silicon wafer using sol-gel technique. These deposited films can be characterized by various methods such as X-ray diffraction (XRD), surface profilometer, ellepsometer and ultraviolet visible spectroscopy. The XRD can be used to show the presence of anatase TiO 2 phase in the films deposited. The UV spectroscopy can be used to lookout the shifting of absorption edges of TiO 2 film towards visible light region which depends solely on doping concentration. The mechanism of depositing a thin film of TiO 2 with different doping materials with different concentration is discussed here in this paper. Index Terms—Titanium dioxide (TiO 2 ) , Sol-gel, Doping, XRD, Grain size, Band gap, thin films. I. INTRODUCTION iO 2 films are extensively studied because of its interesting chemical, electrical and optical properties. The interest in TiO 2 was mainly due to its non-toxicity and good stability in various environments [1]. TiO 2 is a high band gap semiconductor that is transparent to visible light and has excellent optical transmittance. The American Food and Drug Administration (FDA) has approved the use in human food, drugs and cosmetics and compounded in food contact materials such as cutting board and other surfaces in contact with unprotected food [2]. For photovoltaic applications, TiO 2 photo-catalyst is effective in solar light or light from visible region of the solar spectrum need to be developed as future generation photo-catalytic material [3].TiO 2 has high refractive index and good insulating properties, and as a result it is widely used as protective layer for very large scale integrated circuits and for manufacture of optical elements. Such as dye-sensitized Manuscript received March 23, 2011; revised April 16, 2011. * A. M Gaur is with Electrical Engineering Department, MM University Solan, Himachal Pardesh, 173229 India ( phone: +91-1792- 268221; e-mail: gauranshu10@gmail.com). Rajat Joshi is with Electronics & communication Department, RBCENTWH, Hoshiarpur, India (e-mail: rajatjoshier02@gmail.com). Mukesh Kumar is with the Electronics & Communication Department, U.I.E.T, Kurukshetra University, Kurukshetra, India (e-mail: mail2mukeshsharma@gmail.com). photovoltaic cells as well as antireflective coatings, gas sensors, electro-chromatic displays, and planar waveguides. The main difficulty encountered with TiO 2 is the high recombination rate of the photo excited electron hole pairs in the irradiated particles [4]. This problem can be resolved by changing the structure of photo catalyst by doping with ion such as iron or other metal. However the doped TiO 2 films have shown potential for uses in number of electronic device applications. Additionally, good dispersibility of TiO 2 is very advantageous in enhancing their UV screening efficiency [5]. The high dielectric constant of TiO 2 allows its considerations an alternative to silicon dioxide for ultra thin gate oxide dielectrics used in memory and logic devices. The dielectric properties of TiO 2 have been of great interest for applications in the telecommunications industry due to its unusual high dielectric constant and low dielectric loss [6]. Doping TiO 2 with Pt, Fe or other metal ions shifts the threshold for photonic excitation towards the visible range [7]. Fe ions doped into TiO 2 have caused changes in phase composition and some properties of the catalyst such as phase composition, particle size and surface area [8]. Several methods have been used to prepare Titanium films, and these include chemical vapor deposition (CVD), pulsed laser deposition, reactive sputtering and sol-gel deposition. The sol-gel technique has emerged as one of the most promising techniques as this method produces samples with good homogeneity at low cost. The films deposited by this method results a film with high dielectric constant which is suitable for metal oxide semiconductor capacitor [9]. The sol-gel process is one of the most potential technologies for the preparation of TiO 2 photo catalyst [10]. The sol-gel process can be accomplished using different deposition routines. The preparation of TiO 2 thin films by spin coating of sol precursor onto microscopic glass slides, silicon and indium tin oxide (ITO) coated glass substrates has been recently reported. This method of film preparation is preferred to other sol-gel variants because of its compatibility with current practices of silicon technology. The material generally can be formulated in one of three main crystallographic phase’s i.e rutile, anatase and brookite [11]. Chemical doping can also cause structure and morphology changes, for example it can force the transformation from the anatase to the rutile structure [12].The presence of anatase structure in Fe doped TiO 2 films were identified from the x-ray diffraction pattern. The electrical properties of the TiO 2 thin films were changed with the increasing of the annealing temperature [13].This paper mainly focuses on the results of morphological and Deposition of Doped TiO 2 Thin Film by Sol Gel Technique and its Characterization: A Review A.M Gaur * Member, IAENG, Rajat Joshi , Mukesh Kumar Member, IAENG T Proceedings of the World Congress on Engineering 2011 Vol II WCE 2011, July 6 - 8, 2011, London, U.K. ISBN: 978-988-19251-4-5 ISSN: 2078-0958 (Print); ISSN: 2078-0966 (Online) WCE 2011