Cryst. Res. Technol. 41, No. 1, 59 – 63 (2006) / DOI 10.1002/crat.200410530
© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Transmission electron microscopy and Rutherford backscattering
spectrometry studies of Ag
2
Te films formed from Ag-Te thin film
couples
B. C. Mohanty and S. Kasiviswanathan*
Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India
Received 23 November 2004, accepted 9 December 2004
Published online 15 December 2005
Key words thin films, Ag
2
Te, TEM, RBS.
PACS 68.55.-a, 68.37.Lp
Formation of Ag
2
Te thin films from room temperature (300 K) solid state reaction of Ag and Te thin film
couples is investigated. Rutherford Backscattering Spectrometry (RBS) studies confirmed the complete
miscibility of the couples and the stoichiometry of the resulting Ag
2
Te. Structural analysis by Transmission
Electron Microscopy (TEM) showed a fine-grained structure with monoclinic and orthorhombic phases.
Annealing at high temperatures resulted in the growth of giant crystallites with monoclinic phase at random
sites.
© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1 Introduction
Silver chalcogenides have long been the subject of experimental and theoretical studies for their ionic
conductivity, polymorphism and semiconducting properties [1-2]. The recent discovery of giant
magnetoresistance (GMR) [3-5] in silver chalcogenides has deepened the interest, in particular in Ag
2
Te as it
has opened up new challenges from theoretical and application points of view. Ag
2
Te undergoes a first order
phase transition at ~ 418 K. The high temperature phase is characterized by a cubic phase and enhanced ionic
conductivity [6]. Below the transition temperature, Ag
2
Te is a narrow band-gap semiconductor, with band gap
in the range 0.04 - 0.17 eV [7]. Monoclinic and orthorhombic structures have been reported for the low
temperature phase [8-11]. The structure of off-stoichiometric bulk Ag
2
Te (Ag
2+δ
Te) on which the first
observation of GMR has been made is reported to be orthorhombic [3]. However, the structure of Ag
2±δ
Te thin
films that also show similar GMR is found to be monoclinic [4-5].
The present work is aimed at investigating the formation of Ag
2
Te thin films from reaction of Ag and Te
thin film couples at 300 K. An important advantage of the growth of Ag
2
Te film from bilayer structure is the
possibility to precisely control the composition, which is crucial to the observed GMR [12]. The phase
formation of the films has been studied using TEM with emphasis on the microstructure of the films. The
composition analysis of the films has been done by RBS. TEM studies have also been made on films annealed
at 373 K and 473 K, in order to observe the effect of heat treatment at temperatures below and above the phase
transition temperature (418 K).
2 Experimental
Ag
2
Te thin films were prepared by solid state reaction of Ag and Te films at 300 K. The Ag-Te bilayers were
formed by depositing a thin Ag film followed by a Te film of suitable thickness. The thicknesses of the
individual films were so chosen to ensure the stoichoimetry of the final compound. The base pressure during
the film growth was about 10
-4
Pa. The rate of deposition and the thickness of the films were monitored in situ
by a quartz crystal thickness monitor. The as-deposited samples were vacuum annealed at a pressure of 2×10
-4
Pa for one hour at 373 K and 473 K. The structure and phase purity of the as-deposited and annealed films
grown on glass substrates were investigated by a Philips CM-12 transmission electron microscope. The
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* Corresponding author: e-mail: kasi@iitm.ac.in