Accepted Manuscript Capacitance Modeling of Gate Material Engineered Cylindrical/Surrounded Gate MOSFETs for Sensor Applications Jay Hind Kumar Verma, Yogesh Pratap, Subhasis Haldar, R.S. Gupta, Mridula Gupta PII: S0749-6036(15)30192-0 DOI: 10.1016/j.spmi.2015.09.015 Reference: YSPMI 3979 To appear in: Superlattices and Microstructures Received Date: 12 May 2015 Revised Date: 12 September 2015 Accepted Date: 14 September 2015 Please cite this article as: J.H.K. Verma, Y. Pratap, S. Haldar, R.S. Gupta, M. Gupta, Capacitance Modeling of Gate Material Engineered Cylindrical/Surrounded Gate MOSFETs for Sensor Applications, Superlattices and Microstructures (2015), doi: 10.1016/j.spmi.2015.09.015. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.