www.tjprc.org SCOPUS Indexed Journal editor@tjprc.org MEASUREMENT OF CHANNEL MOBILITY IN TOP CONTACT PENTACENE ORGANIC THIN FILM TRANSISTORS PRAVINA RAJPUT 1 & VINAY K. SINGH 2 1 Ph.D. Scholar, C.S.V.T.U. Bhilai, India 2 Associate Professor, G.E.C. Jagdalpur, India ABSTRACT A source voltage separation based method for the extracting the effective channel mobility in top contact pentacene organic thin film transistor is developed. Using the measured source voltage appear across the source is extracted. The new method facilitates mobility extraction in situations where the voltage appears across the source, making the mobility extraction easier and more accurate KEYWORDS: OTFT, Pentacene, Contact Resistance, Effective Channel Mobility Received: Jun 08, 2020; Accepted: Jun 28, 2020; Published: Aug 19, 2020; Paper Id.: IJMPERDJUN2020814 INTRODUCTION Organic thin film transistors (OTFT) are being actively developed for a number of potential applications like sensors, inverters, radio frequency identification tags and displays on substrates such as glass, plastic, fabric and even paper [1]-[4]. There are significant improvement in performance over the last two decade, there are a number of challenging problems that still need to be addressed. Among them is high voltage required for operation of these transistors. A reduction in insulator thickness and use of insulators with high dielectric constant are among the potential approaches that are being explored to obtain low operating voltages [5]-[10]. Source resistance is one of the major challenge in organic thin film transistor. As a result, it is important to obtain its accurate value of channel mobility, so that factors contributing to it can be properly understood and managed. The method proposed in this work uses to measure the floating electrode voltage and then extracted voltage underneath the source as describe in Ref [11]. The Channel mobility is measured by subtraction of the source voltage from drain to source voltage. DEVICE FABRICATION Figure 1: Schematic of Top Contact Bottom Gate Pentacene OTFTs Fabricated on PVP Dielectric. Original Article International Journal of Mechanical and Production Engineering Research and Development (IJMPERD) ISSN(P): 2249–6890; ISSN(E): 2249–8001 Vol. 10, Issue 3, Jun 2020, 8565–8570 © TJPRC Pvt. Ltd.