AIP Advances 10, 115218 (2020); https://doi.org/10.1063/5.0016027 10, 115218 © 2020 Author(s). Resistive switching in Al 2 O 3 based trilayer structure with varying parameters via experimentation and computation Cite as: AIP Advances 10, 115218 (2020); https://doi.org/10.1063/5.0016027 Submitted: 14 July 2020 • Accepted: 30 October 2020 • Published Online: 19 November 2020 Jameela Fatheema, Sabeen Fatima, Bilal Jehanzaib Ali, et al. ARTICLES YOU MAY BE INTERESTED IN Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks APL Materials 7, 081120 (2019); https://doi.org/10.1063/1.5108650 Reliability of analog resistive switching memory for neuromorphic computing Applied Physics Reviews 7, 011301 (2020); https://doi.org/10.1063/1.5124915 A comprehensive review on emerging artificial neuromorphic devices Applied Physics Reviews 7, 011312 (2020); https://doi.org/10.1063/1.5118217