Hydrogen atoms in KH
2
PO
4
crystals
S. D. Setzler, K. T. Stevens, and L. E. Halliburton
Department of Physics, West Virginia University, Morgantown, West Virginia 26506
M. Yan, N. P. Zaitseva, and J. J. DeYoreo
Lawrence Livermore National Laboratory, Livermore, California 94551
Received 31 July 1997
Hydrogen atoms have been produced at 77 K in single crystals of potassium dihydrogen phosphate KH
2
PO
4
or KDP using either 60-kV x rays or the fourth harmonic 266 nm of a pulsed Nd:YAG yttrium aluminum
garnet laser. The electron-paramagnetic-resonance spectrum from these hydrogen atoms exhibits a character-
istic 500-G hyperfine splitting and is easily saturated with microwave power. These atoms occupy interstitial
sites and are electron traps. The corresponding hole trap is the well-known (HPO
4
)
-
hole center identified by
its 31-G phosphorus hyperfine splitting. Both the hydrogen atoms and the hole centers thermally decay in the
temperature range between 80 and 200 K. The observed displacement of protons by 266-nm photons provides
direct evidence in support of the proton-transport mechanism recently proposed by Davis, Hughes, and Lee
Chem. Phys. Lett. 207, 540 1993 to explain laser-induced transient optical absorption at room temperature
in KDP. S0163-18299803906-X
Potassium dihydrogen phosphate (KH
2
PO
4
), better
known as KDP, is an important nonlinear optical material
with many applications in the ultraviolet. Among these are
the generation of the third 355 nm and fourth 266 nm
harmonics of pulsed Nd:YAG yttrium aluminum garnet la-
sers. Problems can arise, however, when unwanted defect-
related optical-absorption bands are produced by pump lasers
operating at high peak powers. Despite their importance,
little is presently known about the optically active point de-
fects in KDP, including possible defect formation mecha-
nisms. Thus, fundamental studies are being undertaken to
identify and characterize those defects that limit device per-
formance. We anticipate that a better understanding of the
point defects will lead to improvements in the power-
handling capability of KDP crystals i.e., minimization of
optical damage and will permit the growth of more uniform
KDP crystals.
A recent paper by Davis, Hughes, and Lee
1
reported the
formation of a broad transient optical-absorption band cov-
ering much of the visible and near-uv region when KDP
crystals were exposed to an intense 266-nm laser beam
(GW/cm
2
) at room temperature. The absorbing defects de-
cayed nonexponentially over periods approaching 20 s. Al-
though their experimental techniques did not allow them to
directly identify the defects involved, these investigators
noted that the spectral dependence of the transient absorption
matched that of a previously reported x-ray-induced
spectrum
2–4
in KDP. The defect responsible for this absorp-
tion is the (HPO
4
)
-
center, which consists of a ‘‘proton
vacancy’’ with a hole trapped on the nearest oxygen ion in
the adjacent PO
4
unit. These observations led Davis, Hughes,
and Lee
1
to suggest that the transient optical absorption was
initiated by a two-photon absorption event quickly followed
by the transport of a proton or a hydrogen atom and the
simultaneous formation of an (HPO
4
)
-
center. Marshall
et al.
5
also studied the broad transient absorption induced in
KDP by intense 266-nm laser beams. These latter investiga-
tors determined experimental values for the various param-
eters needed to characterize the phenomenon and then used
their results to successfully model the effect of the transient
absorption on the efficiency of fourth-harmonic conversion
in KDP.
PHYSICAL REVIEW B
CONDENSED MATTER AND MATERIALS PHYSICS
THIRD SERIES, VOLUME 57, NUMBER 5 1 FEBRUARY 1998-I
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