Integrated Ferroelectrics, 94: 11–20, 2007 Copyright © Taylor & Francis Group, LLC ISSN 1058-4587 print / 1607-8489 online DOI: 10.1080/10584580701755716 Growth Temperature Dependence of Ga 2 O 3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition G. X. Liu, 1,2,** F. K. Shan, 1,2,*** W. J. Lee, 2,* B. C. Shin, 2 S. C. Kim, 3 H. S. Kim, 4 and C. R. Cho 5 1 Laboratory of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China 2 Electronic Ceramics Center, DongEui University, Busan 614-714, Korea 3 Physics Department, DongEui University, Busan 614-714, Korea 4 Department of Semiconductor Physics, Korea Maritime University, Busan 600-545, Korea 5 Department of Nano-medical Engineering, Pusan National University, Busan 609-735, Korea ABSTRACT In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga 2 O 3 thin films at various temperatures (50, 150, and 250 ◦ C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH 3 ) 2 GaNH 2 ] 3 , and oxygen plasma of 150 W. The growth temperature dependences of the Ga 2 O 3 thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga 2 O 3 /Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated. Keywords: Gallium oxide; thin film; AFM; XRD; electrical properties; transmittance Received June 15, 2007; accepted September 30, 2007. ∗ Corresponding author. Tel: 82 51 890 2542; E-mail: leewj@deu.ac.kr ∗∗ Tel: +82 51 890 2336; E-mail: gxliucn@yahoo.com ∗∗∗ Tel: +82 10 8694 8760; E-mail: fukaishan@yahoo.com [193]/11