Journal of the Korean Physical Society, Vol. 60, No. 10, May 2012, pp. 1548∼1551 Preparation and Properties of Sb 2 O 3 -doped SnO 2 Thin Films Deposited by Using PLD Geun Woo Kim, Keun Young Park, M. S. Anwar, Yong Jun Seo, Chang Hoon Sung and Bon Heun Koo ∗ School of Nano & Advanced Materials Engineering, Changwon National University, Changwon 641-773, Korea and Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea Jiho Jang Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea Gyung Suk Kil and Dae Won Park Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea (Received 4 July 2011, in final form 14 December 2011) Transparent conducting oxides (TCOs) are key materials in optoelectronic devices applications, such as flat-panel displays, touch panel, heat mirrors, gas sensor, light-emitting diodes and solar cell. In this study, the Sb2O3-doped SnO2 films have been deposited on glass substrates by using the pulsed laser deposition (PLD) method. The structural, electrical, and optical properties of these films have been studied as functions of the dopingconcentration, oxygen partial pressure, film thickness, and substrate temperature during deposition. The structural properties of films were analyzed by using X-ray diffraction (XRD). The electrical and the optical properties were checked by using a four probe sheetresistance, Hall measurement system and an UV-VIS-NI spectrometer, respectively. Under optimized deposition conditions (6 wt% Sb2O3,Ts = 500 ◦ C, and 60 m Torr of O2 and film thickness at 700 nm). The optimized films had an electrical resistivity of 1.3 × 10 −3 Ω·cm, a carrier concentration of 2.3 × 10 20 cm −3 , a Hall mobility of 20.1 cm 2 v −1 s −1 and an average optical transmittance of over 80% in the visible range. PACS numbers: 73.61.-r Keywords: Transparent conducting oxide (TCO), Sb 2 O 3 -doped SnO 2 films, Resistivity (ρ), Transmittance (%), Figure of merit (Φ TC ) DOI: 10.3938/jkps.60.1548 I. INTRODUCTION SnO 2 films with a tetragonal rutile structure are semi- conductors with a wide band gap [1,2], in addition, doped SnO 2 films have the high transparency and low resis- tivity and due to the original structure of SnO 2 , they are more stable than other transparent conducting ox- ide (TCO) films such as zinc oxide (ZnO) and Sn-doped In 2 O 3 (ITO). Moreover, SnO 2 films have a lower mate- rial cost. For there reasons, doped SnO 2 thin films have a wide range of applications such as light emitting diodes (LEDs), liquid crystal displays (LCDs), electrochromic displays (ECDs), solar cells [3–5], heating elements in aircraft, special furnaces, and luminescent lamps [6,7]. Either doped or non-doped SnO 2 thin films can be pre- pared by using a number of techniques [8,9]: chemical ∗ E-mail: bhkoo@changwon.ac.kr; Fax: +82-55-262-6486 vapor deposition, sputtering, sol-gel coating, spray py- rolysis, and pulsed laser deposition (PLD). Among there methods, PLD is considered as an important method for depositing polycrystalline films like doped-SnO 2 with good stoichiometry. Particularly, there is a strong cor- relation between the energetic plasma created by the pulsed laser and the oxygen pressure [10]. In this present study, Sb 2 O 3 -doped SnO 2 (SnO 2 : Sb 2 O 3 ) films were suc- cessfully fabricated on glass substrates by using the PLD technique. The reason we selected Sb as a doping ele- ment for the SnO 2 matix is that the ionic radius of Sb 3+ (0.076 nm) is very similar to that of Sn 4+ (0.071 nm) [11]. Therefore, we expected to get enhanced properties for the SnO 2 films. The structural, electrical and optical properties of the as-obtained films were investigated in detail. -1548-