Available online at www.sciencedirect.com ScienceDirect Materials Today: Proceedings 4 (2017) 6466–6471 www.materialstoday.com/proceedings 2214-7853© 2017 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of International Conference on Science and Technology of the Emerging Materials. STEMa2016 Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering Kittikhun Seawsakul a,b , Mati Horprathum b , Pitak Eiamchai b , Viyapol Pattantsetakul b , Saksorn Limwichean b , Pennapa Muthitamongkol c , Chanchana Thanachayanont c and Prayoon Songsiriritthigul a * a School of Physics–Institute of Science, Suranaree University of Technology Muang, Nakhon Ratchasima, 30000 Thailand b Optical Thin-Film Technology Laboratory, National Electronics and Computer Technology Center, Pathum Thani, 12120, Thailand c National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathum Thani 12120 Thailand Abstract Aluminum-doped zinc-oxide (AZO) thin films were deposited on silicon wafers and glass substrates by a pulsed DC magnetron sputtering at room temperature. The influence of different sputtering powers during the film deposition towards the obtained thin films was investigated. The crystal structures, physical morphologies, optical transmission, and electrical properties of the AZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), spectrophotometer, and hall-effect measurements, respectively. The results demonstrated that all the AZO thin films exhibited the hexagonal structure, where the growth orientation between (002) and (103) were changed with the increase of the sputtering power. In addition, the average transmission of the AZO thin films was high to 87% in the visible region, indicating that the optical transmission was significantly influenced by the sputtering power. Furthermore, the resistivity, the charge mobility, and the carrier concentration of the AZO thin films were improved with the increased sputtering power. Finally, the improved conductivity related to the film crystallinity and thickness was determined and discussed. © 2017 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of International Conference on Science and Technology of the Emerging Materials. Keywords: Aluminum-doped zinc-oxide; Pulsed dc magnetron sputtering; Crystallinity; Room temperature * Corresponding author. E-mail address: prayoon.song@gmail.com