Journal Pre-proof Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO 2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes K. Sasikumar, R. Bharathikannan, M. Raja, B. Mohanbabu PII: S0749-6036(19)31763-X DOI: https://doi.org/10.1016/j.spmi.2020.106424 Reference: YSPMI 106424 To appear in: Superlattices and Microstructures Received Date: 8 October 2019 Revised Date: 30 December 2019 Accepted Date: 26 January 2020 Please cite this article as: K. Sasikumar, R. Bharathikannan, M. Raja, B. Mohanbabu, Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO 2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes, Superlattices and Microstructures (2020), doi: https://doi.org/10.1016/ j.spmi.2020.106424. This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. © 2020 Published by Elsevier Ltd.