Smooth Stress Relief of Trifluoroacetate Metal-Organic Solutions
for YBa
2
Cu
3
O
7
Film Growth
Katerina Zalamova,* Neus Roma `, Alberto Pomar, Stephanie Morlens, Teresa Puig,
Jaume Ga ´zquez, Anna E. Carrillo, Felip Sandiumenge, Susana Ricart, Narcı ´s Mestres, and
Xavier Obradors
Institut de Cie ` ncia de Materials de Barcelona,
CSIC, Campus de la UAB, 08193 Bellaterra, Catalonia, Spain
ReceiVed July 6, 2006
The mechanisms controlling stress relief during the drying and pyrolysis processes of trifluoroacetate
metal-organic precursors have been elucidated in view of high rate fabrication of epitaxial superconducting
YBa
2
Cu
3
O
7
thin films. Combining FTIR, TGA, and film thickness evolution measurements, we conclude
that gel drying and sintering occurs below T ∼ 250 °C while film densification, due to metal-organic
pyrolysis, occurs in the range 250-310 °C. Stress relief is the driving force leading to smooth or structurally
inhomogeneous films, displaying buckling or macrocracks, depending on the rate of film transformation.
High heating rates can be used during the gel drying and sintering process preserving the film homogeneity
because the developed stress is below that required to generate buckling, as demonstrated by
nanoindentation experiments. Within the temperature window where the metal-organic decomposition
process occurs, the gas flow and the temperature ramp can be tuned to achieve fast pyrolysis preserving
the film homogeneity. Optical microscopy, TEM, SEM, AFM, nanoindentation, μ-Raman spectroscopy,
electrical resistivity, and critical current measurements of the films have been combined to stress the
relevance of preserving the homogeneity of the films from the nanometric to the macroscopic length
scales, to achieve high critical current YBa
2
Cu
3
O
7
thin films, i.e., J
c
≈ 3-4 MA/cm
2
at 77 K.
I. Introduction
Chemical solution deposition (CSD) is a cost-effective
technique with a high potential for preparation of functional
large area and long length films.
1
Many oxides with
electronic, electrical, ferroelectric, dielectric, magnetic, or
superconducting functionalities have been prepared by CSD
having either a polycrystalline or an epitaxial structure.
2-7
High-temperature superconducting coated conductors are one
example where preparation of high-quality epitaxial thin
films with long lengths is required and, therefore, CSD is a
promising alternative to the conventional physical deposition
techniques.
8-13
One of the challenges of the solution-based
deposition processes, however, is to avoid the formation of
microstructural inhomogeneities, which could influence their
functionality, during any of the steps converting the deposited
chemical solution into the crystalline film.
14-16
This process
consists of one or two steps, depending on the compliance
of the films during the densification, pyrolysis, and crystal-
lization processes. In a single-step process the removal of
the organic constituents and the oxide crystallization occur
simultaneously while in the two-step process they are
separately accomplished. Several characterizations of the
metal-organic precursor chemistry (reactivity and decompo-
sition temperature) and the complex rearrangement leading
to amorphous or nanocrystalline phases resulting from the
pyrolysis will determine the choice of a given process. Some
ferroelectric oxides, for instance, can be prepared through a
one-step rapid thermal annealing process (>100 °C/s) without
formation of cracks or blisters.
2
Trifluoroacetate (TFA)
metal-organic decomposition (MOD) has been largely in-
vestigated as a chemical solution route leading to high-quality
YBa
2
Cu
3
O
7
(YBCO) superconducting films with high critical
* To whom correspondence should be addressed. E-mail: kzalamova@
icmab.es.
(1) Shimoda, T.; Matsuki, Y.; Furusawa, M.; Auki, T.; Yudasaka, I.;
Tanaka, H.; Iwasawa, H.; Wang, D.; Miyasaka, M.; Takeuchi, Y.
Nature 2006, 440, 783.
(2) Schwartz, R. W. Chem. Mater. 1997, 9, 2325.
(3) Lange, F. F. Science 1996, 273, 903.
(4) Bhuiyan, M. S.; Paranthaman, M.; Salama, K. Supercond. Sci. Technol.
2006, 19, R1.
(5) Manabe, T.; Yamaguchi, I.; Kondo, W.; Mizuta, S.; Kumagai, T. J.
Mater. Res. 1997, 12, 541.
(6) Jia, Q. X.; Mccleskey, T. M.; Burrell, A. K.; Lin, Y.; Collis, G. E.;
Wang, H.; Li, A.D. Q.; Foltin, S. R. Nat. Mater. 2004, 3, 529.
(7) Schwartz, R. W.; Schneller, T.; Waser, R. C. R. Chim. 2004, 7, 433.
(8) Larbalestier, D.; Gurevich, A.; Feldmann, D. M.; Polyanskii, A. Nature
2001, 414, 369.
(9) Dawley, J. T.; Ong, R. J.; Clem, P. G. J. Mater. Res. 2002, 17, 1678.
(10) Sandiumenge, F.; Cavallaro, A.; Ga ´zquez, J.; Puig, T.; Obradors, X.;
Arbiol, J.; Freyhardt, H. C. Nanotechnology 2005, 16, 1809.
(11) Honjo, T.; Nakamura, Y.; Teranishi, R.; Tokunaga, Y.; Fuji, H.;
Shibata, J.; Asada, S.; Izumi, T.; Shiohara, Y.; Ijima, Y.; Saitoh, T.;
Kaneko, A.; Murata, K. Physica C 2003, 392-396, 873.
(12) Rupich, M. W.; Zhang, W.; Li, X.; Kodenkandath, T.; Verebelyi, D.
T.; Schoop, U.; Thieme, C.; Teplitsky, M.; Lynch, J.; Nguyen, N.;
Siegal, E.; Scudiere, J.; Maroni, V.; Venkataraman, K.; Miller, D.;
Holesinger, T. G. Physica C 2004, 412-414, 877.
(13) Obradors, X.; Puig, T.; Pomar, A.; Sandiumenge, F.; Mestres, N.; Coll,
M.; Cavallaro, A.; Roma, N.; Gazquez, J.; Gonzalez, J. C.; Castan ˜o,
O.; Gutierrez, J.; Palau, A.; Zalamova, K.; Morlens, S.; Hassini, A.;
Gubert, M.; Ricart, S.; Moreto, J. M.; Pin ˜ol, S. Supercond. Sci.
Technol. 2006, 19, S13.
(14) Takenaka, S.; Kozuka, H. Appl. Phys. Lett. 2001, 79, 3485.
(15) Park, G. T.; Choi, J. J.; Park, C. S.; Lee, J. W.; Kim, H. E. Appl.
Phys. Lett. 2004, 85, 2322.
(16) Kozuka, H.; Kajimura, M.; Hirano, T.; Katayama, K. J. Sol-Gel Sci.
Technol. 2000, 19, 205.
5897 Chem. Mater. 2006, 18, 5897-5906
10.1021/cm061556+ CCC: $33.50 © 2006 American Chemical Society
Published on Web 11/09/2006