Available online at www.sciencedirect.com ScienceDirect Materials Today: Proceedings 18 (2019) 1304–1309 www.materialstoday.com/proceedings 2214-7853 © 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Conference on Nanotechnology: Ideas, Innovations & Initiatives-2017 (ICN:3i- 2017). ICN3I-2017 Optimization of Nano-structured Tin Doped Indium Oxide Films Grown at Substrate Temperature close to the Melting Point of Tin Laxmikanta Karmakar and Debajyoti Das* Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata – 700 032, INDIA Abstract For efficient utilization of In 2 O 3 :Sn (ITO) films in device structures, a low-temperature growth is always preferred. However, optical transparency and electrical conductivity of the transparent-conducting-oxide (TCO) films always hold a trade-off relation in-between. For accommodating all such stringent requirements, ITO films in the present investigation has been deposited on glass substrates using 13.56 MHz RF magnetron sputtering and optimized at temperature close to the melting point of Sn as a dopant to the In 2 O 3 network, in order to utilize its best favorable contribution to the growth of properly doped films having balanced combination of relevant optical, electrical and nano-structural properties. © 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Conference on Nanotechnology: Ideas, Innovations & Initiatives-2017 (ICN:3i- 2017). Keywords: Nano-structured ITO films; Sn 4+ incorporation; RF magnetron sputtering; Melting temperature of metallic Sn. 1. Introduction Transparent conducting oxides (TCOs) are semiconductor materials which are simultaneously optically transparent and electrically conducting, by virtue of which those are mostly used as transparent electrodes in many devices e.g., liquid crystal displays (LCDs), light emitting diodes (LEDs), solar cells, etc [1-3]. TCOs are generally based on metal oxide semiconductors such as In 2 O 3 , SnO 2 and ZnO, and with some metal doping [4-11]. There is a * Corresponding author. Tel.: +91 (33)24734971; fax: +91 (33)24732805. E-mail address (D.Das): erdd@iacs.res.in