Materials Today: Proceedings 2 (2015) 3758 – 3761 Available online at www.sciencedirect.com ScienceDirect 2214-7853 © 2015 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the conference committee members of the 4th International conference on Materials Processing and Characterization. doi:10.1016/j.matpr.2015.07.168 4th International Conference on Materials Processing and Characterization Negative Differential Conductance in graphene layer adsorbed with Beryllium K. Vagdevi a , V. Radhika Devi b* a Dept. of Physics, GokarajuRangaraju Institute of Engineering &Technology, Hyderabad, India b MLR Institute of Technology, Dundigal, Hyderabad,500043, India Abstract In the present work we study the electrical characteristics of graphene layer at various temperatures adsorbed with one beryllium. Negative differential conductance is observed which can be exploited for applications in analog electronics. It is observed that for 0v and -1v applied at 900k the negative differential conductance appears to increase. For -2v the conductance starts from 300k. The negative differential conductance in graphene can be attributed to its intrinsic nonlinear carrier transport under a strong electric field. © 2014 The Authors. Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the conference committee members of the 4th International conference on Materials Processing and Characterization. Keywords: graphene layer ;Negative differential conductance;nonlinear carrier transport 1. Introduction The observation of negative differential conductance in graphene has attracted many researchers in exploring the materials for its possible applications in fast switches, high frequency oscillators and many more applications. Materials are said to exhibit negative differential conductance in which an increase in voltage across the device's terminals results in a decrease in electric current through it. Negative resistance varies depending on the voltage or current applied to the device, and a device can have negative resistance over only a limited portion of its voltage or current range. Graphene is a zero-overlap semimetal in which the electronic properties are dictated by the bonding and anti- bonding (the valance and conduction bands) of the pi orbitals [1]. At the Dirac point in graphene, electrons and holes have zero effective mass and the graphene electrons act very much like photons in their mobility. © 2015 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the conference committee members of the 4th International conference on Materials Processing and Characterization.