IP: 5.188.216.251 On: Tue, 04 Dec 2018 10:18:40 Copyright: American Scientific Publishers Delivered by Ingenta Copyright © 2018 American Scientiﬁc Publishers All rights reserved Printed in the United States of America Article Journal of Nanoscience and Nanotechnology Vol. 18, 7912–7916, 2018 www.aspbs.com/jnn Ag/TiO 2 NPs/TiO 2 TF/Si Based Non-Volatile Memristor Device for Neuromorphic Computing Applications Shubhro Chakrabartty 1 , Sandeep Kumar 2 , Hanjung Song 2 ∗ , and Minhyon Jeon 2 1 Department of Electronics and Communication Engineering, National Institute of Technology Goa, Goa 403401, India 2 Department of Nanoscience and Engineering, Centre for Nano Manufacturing, INJE University Gimhae, 50834, Republic of Korea Memristor device is a very promising emerging component for a revolution of the memory and com- puting applications in the recent years. It could be enhancing the ﬁeld of artiﬁcial intelligence and helping the patients, suffering from various kinds of autism disorders, as well as in neuromorphic computing, neural networks, etc. This research article proposes fabricated non-volatile memristor device for neuromorphic computing applications. The demonstrate memory is based on Ag/TiO 2 NPs/TiO 2 TF/Si layers’ structure and achieves better conductivity and storage capacity, which could improve the performance of the neuromorphic computing as compared to conventional ones. The fabrication method of the proposed multi-layer memristor is examine with well precise techniques, which overcome the previous challenges. The surface morphology of the device is analysed by ﬁeld emission gun scanning electron microscopy (FEGSEM) and Energy dispersive X-ray system. The rise time (Tr) of 2.5 s and fall time (Tf) of 3 s are demonstrated under ON/OFF white light illumination. While X-ray diffraction depicted that titanium dioxide nano particle, (TiO 2 NPs) are crys- talline in nature. Moreover, Photoluminescence and Raman analysis justify crystalline nature also and increasing oxygen vacancies concentration with the heating effect of TiO 2 NPs. The electrical analysis reveals the driving mechanism under different sweeping voltages during SET and RESET resulting in low resistance state (‘ON’). Finally, capacitance-voltage characteristic of the proposed memory device shows excellent charge storage capacity within the dynamic range of operation. Keywords: Titanium Dioxide Thin Film (TiO 2 TF), Titanium Dioxide Nano Particles (TiO 2 NPs), Memristor Devices, Neuromorphic Computing. 1. INTRODUCTION Nowadays resistive switching non-volatile memory (RSM) devices initiated new research avenue in the ﬁeld of the semiconductor industry with an expansive spectrum of possible mechanisms. 1–4 The ardent qualities fascinate to researchers have shown interest in non-volatile mem- ory because they are simple composition and compatible processing with predictable complementary metal-oxide- semiconductor (CMOS) fabrication. 5 6 While two terminal devices such as memristor etc. are extensively explored its characteristics towards oxides, metal oxides, organic polymers and solid electrolytes 7–9 and these turned out to be next-generation solutions for the problem of scaling existing semiconductor memories such as ﬂash to smaller dimensions. 10 Still mostly silicon (Si) and germanium (Ge) semiconductors are used to fabricate the memory devices ∗ Author to whom correspondence should be addressed. due to their sensitivity towards the thermal process but they are limiting the performance of storage device. 11–13 Titanium dioxide is a ubiquitous compound and covered several sectors such as photocatalyst, solar cell, superca- pacitors and energy storage device. 14 For a couple of years, TiO 2 has proven to be the most promising candidate for various applications such as RRAM, memristors, recon- ﬁgurable analog integrated circuits, neuromorphic comput- ing etc. 15–22 Most of the research groups extensively used metal nano particles such as Pt, 23 Cu, 24 Au 25 on the TiO 2 ﬁlm which increases the oxygen-related defect states for memory storage applications. However, on the long run, it could not meet the necessary requirements. In order to prevent degrade the performance of parent device, mem- ory with oxide thin ﬁlm covered by metal NPs are now replaced by metal oxide NPs. 26 In this work, two layers of TiO 2 TF/TiO 2 NPs are pre- pared on the n-type Si substrate with Ag top electrode. 7912 J. Nanosci. Nanotechnol. 2018, Vol. 18, No. 11 1533-4880/2018/18/7912/005 doi:10.1166/jnn.2018.15556