Advances in Computational Sciences and Technology ISSN 0973-6107 Volume 10, Number 10 (2017) pp. 2985-3013 © Research India Publications http://www.ripublication.com III-V Compound Semiconductor Laser Heterostructures Parametric Performance Evaluation For InGaAs/GaAs And AlGaAs/GaAs Saima Beg 1 , Syed Hasan Saeed 2 , M.J.Siddiqui 3 1 Department of ECE, Integral University, Lucknow, U.P. India 2 Department of ECE, Integral University, Lucknow, U.P., India 3 Department of Electronics Engineering, Z.H.college of Engineering and Technology, AMU, Aligarh, U.P. Abstract This paper presented a detailed analysis and up-to-date performance evaluation using the band parameters for the technologically important III–V compound semiconductors heterostructures of InGaAs/GaAs and AlGaAs/GaAs in terms of gain spectrum along with their wavelength variation with respect to quantum well/barrier thickness, relaxation time and concentration. Using the vast literature review of the consistent parameter sets and energy transition is evaluated by applying model of solid theory for both materials. Emphasizing the effect of strain over lattice structure band structure calculations are performed using simulated mathematical model. The results are evaluated by simulated model by considering the direct and indirect energy gaps, crystal field splitting, bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and lattice deformation at specific temperature and different alloy-composition concentration. INTRODUCTION A compound semiconductor is composed of elements from two or more different groups of the periodic table. GaN, GaAs, InP, InN, InGaN, AlGaN, AlGaAs etc. referred as III-V semiconducting binary and ternary compounds. Many of these compound semiconductors have electrical and optical properties. Extensive research