J. Vac. Sci. Technol. A 40, 062401 (2022); https://doi.org/10.1116/6.0001895 40, 062401 © 2022 Author(s). Synthesis and characteristics of Sn-doped SiO 2 via plasma-enhanced atomic layer deposition for self-aligned patterning Cite as: J. Vac. Sci. Technol. A 40, 062401 (2022); https://doi.org/10.1116/6.0001895 Submitted: 31 March 2022 • Accepted: 29 July 2022 • Published Online: 12 September 2022 Suhyeon Park, Junyung An and Hyeongtag Jeon COLLECTIONS Paper published as part of the special topic on Atomic Layer Deposition (ALD) ARTICLES YOU MAY BE INTERESTED IN Germanium dioxide: A new rutile substrate for epitaxial film growth Journal of Vacuum Science & Technology A 40, 050401 (2022); https:// doi.org/10.1116/6.0002011 Photoelectron spectroscopic studies on metal halide perovskite materials Journal of Vacuum Science & Technology A 40, 060801 (2022); https:// doi.org/10.1116/6.0001903