This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details: IP Address: 132.239.1.231 This content was downloaded on 01/03/2017 at 09:27 Please note that terms and conditions apply. P-type doping of GaN by magnesium ion implantation View the table of contents for this issue, or go to the journal homepage for more 2017 Appl. Phys. Express 10 016501 (http://iopscience.iop.org/1882-0786/10/1/016501) Home Search Collections Journals About Contact us My IOPscience You may also be interested in: Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition Abdelrahman Zkria, Yki Katamune and Tsuyoshi Yoshitake Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films Shinya Ohmagari, Takanori Hanada, Yki Katamune et al. Nonpolar p-GaN/n-Si heterojunction diode characteristics: a comparison between ensemble and single nanowire devices Avinash Patsha, Ramanathaswamy Pandian, Sandip Dhara et al. Zinc oxide thin films on silicon carbide substrates (ZnO/SiC): electro-optical properties and electrically active defects J F Felix, M Aziz, C I L de Araujo et al. Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition Suguru Mase, Yuya Urayama, Takeaki Hamada et al. Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition Abdelrahman Zkria, Hiroki Gima, Mahmoud Shaban et al. Wide gap semiconductor microwave devices V V Buniatyan and V M Aroutiounian