Full Terms & Conditions of access and use can be found at https://www.tandfonline.com/action/journalInformation?journalCode=tetn20 International Journal of Electronics ISSN: (Print) (Online) Journal homepage: https://www.tandfonline.com/loi/tetn20 Breakdown voltage enhancement of gate field plate Al 0.295 Ga 0.705 N/GaN HEMTs P. Murugapandiyan , Md. Tanvir Hasan , V. Rajya Lakshmi , MOHD Wasim , J. Ajayan , N. Ramkumar & D. Nirmal To cite this article: P. Murugapandiyan , Md. Tanvir Hasan , V. Rajya Lakshmi , MOHD Wasim , J. Ajayan , N. Ramkumar & D. Nirmal (2020): Breakdown voltage enhancement of gate field plate Al 0.295 Ga 0.705 N/GaN HEMTs, International Journal of Electronics, DOI: 10.1080/00207217.2020.1849819 To link to this article: https://doi.org/10.1080/00207217.2020.1849819 Accepted author version posted online: 17 Nov 2020. Submit your article to this journal Article views: 2 View related articles View Crossmark data