310 American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) ISSN (Print) 2313-4410, ISSN (Online) 2313-4402 © Global Society of Scientific Research and Researchers http://asrjetsjournal.org/ Performance Analysis of the Designed 1330nm VCSEL Using InGaAsP/InP Jennifar Aktar a* , Prova Christina Gomes b , Nabilah Manzoor c , Priyanka Paul d , Rinku Basak e a,c,d,e Department of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh b School of Electrical and Computer Engineering, University of Ottawa, Canada a Email: jennnifar@gmail.com Abstract This research addresses the design and performance analysis of a 1330nm InGaAsP/InP VCSEL based on a model that accurately describes a multiple quantum well separate confinement heterostructure VCSEL. MATLAB is used as the simulation tool. ‘Material gain vs. photon energy’, ‘Material gain vs. Wavelength’ and ‘Power vs. wavelength’ characteristics are obtained from simulations. Threshold current and output power of the laser is calculated using different parameters. Obtained results correspond to a maximum resonance frequency of 12.312 GHz at 28 mA injection current, -162.3 dB/Hz RIN and a value of 104 dB of the VCSEL at 7 mA injection current. Keywords: VCSEL; Material gain; Carrier density; Photon density; Relative response; Relative intensity; Injection current. 1. Introduction VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor micro laser diode that emits light in a cylindrical beam vertically from the surface of a fabricated wafer, and offers significant advantages when compared to the edge-emitting lasers currently used in the majority of fiber optic communications devices. The vertical-cavity types typically consist of a circular dot geometry with lateral dimensions of a few microns [1]. ------------------------------------------------------------------------ * Corresponding author.