Accepted Manuscript Effect of annealing treatment on the uniformity of CeO 2 /TiO 2 bilayer resistive switching memory devices M. Ismail, A.M. Rana, S.-U. Nisa, F. Hussain, M. Imran, K. Mahmood, I. Talib, E. Ahmed, D.H. Bao PII: S1567-1739(17)30189-X DOI: 10.1016/j.cap.2017.06.012 Reference: CAP 4535 To appear in: Current Applied Physics Received Date: 12 April 2017 Revised Date: 23 June 2017 Accepted Date: 25 June 2017 Please cite this article as: M. Ismail, A.M. Rana, S.-U. Nisa, F. Hussain, M. Imran, K. Mahmood, I. Talib, E. Ahmed, D.H. Bao, Effect of annealing treatment on the uniformity of CeO 2 /TiO 2 bilayer resistive switching memory devices, Current Applied Physics (2017), doi: 10.1016/j.cap.2017.06.012. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.