Full Terms & Conditions of access and use can be found at http://www.tandfonline.com/action/journalInformation?journalCode=tetl20 International Journal of Electronics Letters ISSN: 2168-1724 (Print) 2168-1732 (Online) Journal homepage: http://www.tandfonline.com/loi/tetl20 Efficiency analysis of a modular H-bridge based on SiC MOSFET Julio Cesar Pacher Vega, Jorge Esteban Rodas Benitez, Raul Igmar Gregor Recalde, Marco Rivera, Alfredo Renault Lopez & Leonardo David Comparatore Franco To cite this article: Julio Cesar Pacher Vega, Jorge Esteban Rodas Benitez, Raul Igmar Gregor Recalde, Marco Rivera, Alfredo Renault Lopez & Leonardo David Comparatore Franco (2018): Efficiency analysis of a modular H-bridge based on SiC MOSFET, International Journal of Electronics Letters, DOI: 10.1080/21681724.2018.1426111 To link to this article: https://doi.org/10.1080/21681724.2018.1426111 Accepted author version posted online: 09 Jan 2018. Published online: 10 Feb 2018. Submit your article to this journal Article views: 11 View related articles View Crossmark data