Research Article High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction Chiashain Chuang, 1 Tak-Pong Woo, 2,3 Fan-Hung Liu, 4 Masahiro Matsunaga, 1 Yuichi Ochiai, 1 Nobuyuki Aoki, 1 and Chi-Te Liang 2,4 1 Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan 2 Department of Physics, National Taiwan University, Taipei 106, Taiwan 3 Te Germination Program Ofce, Science & Technology Policy Research and Information Center, NARLabs, Taipei 106, Taiwan 4 Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan Correspondence should be addressed to Tak-Pong Woo; bonwood@gmail.com, Nobuyuki Aoki; n-aoki@faculty.chiba-u.jp, and Chi-Te Liang; ctliang@phys.ntu.edu.tw Received 22 January 2016; Accepted 8 May 2016 Academic Editor: Yasuhiko Hayashi Copyright © 2016 Chiashain Chuang et al. Tis is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Investigating the charge transport behavior in one-dimensional quantum confned system such as the localized states and interference efects due to the nanoscale grain boundaries and merged domains in wide chemical vapor deposition graphene constriction is highly desirable since it would help to realize industrial graphene-based electronic device applications. Our data suggests a crossover from interference coherent transport to carriers fushing into grain boundaries and merged domains when increasing the current. Moreover, many-body fermionic carriers with disordered system in our case can be statistically described by mean-feld Gross-Pitaevskii equation via a single wave function by means of the quantum hydrodynamic approximation. Te novel numerical simulation method supports the experimental results and suggests that the extreme high barrier potential regions on graphene from the grain boundaries and merged domains can be strongly afected by additional hot charges. Such interesting results could pave the way for quantum transport device by supplying additional hot current to food into the grain boundaries and merged domains in one-dimensional quantum confned CVD graphene, a great advantage for developing graphene-based coherent electronic devices. 1. Introduction Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has demonstrated novel optoelectronic and electronic devices in information technology, such as photodetectors [1], solar cells [2, 3], and transistors [4]. Most importantly, the large-scale application of graphene is an urgent development for industrial developments and integrations. Te chemical vapor deposition (CVD) growth of graphene has revealed great potential due to the large- area, cost-efective, and industrial-like schemes such as optical lithography to fabricate one-dimensional graphene quantum constrictions for electronic coherent devices [5– 10]. Recent reports underscore the importance of interference efects due to the intrinsic nanoscale grain boundaries and merged domains within the CVD graphene [11, 12]. Such nanoscale grain boundaries and merged domains revealed diferent transport properties studied by low-temperature scanning gate microscopy (LT-SGM) for making current paths across that specifc regions [13, 14] so as to strongly enhance the interference efect in comparison with homoge- nous exfoliated graphene, like backscattering suppression and Klein tunneling [15]. Such interesting CVD graphene- based electronic devices with its intrinsic grain boundaries and merged domains due to Aharonov-Bohm efect have recently revealed interesting interference efect [14] and could possibly fnely control and tune the total conductance by gate voltages, magnetic felds, and source-drain currents so as to generate a high on/of ratio signal as a quantum coherent transistor for next generation information technology [16]. Hindawi Publishing Corporation Journal of Nanomaterials Volume 2016, Article ID 1806871, 7 pages http://dx.doi.org/10.1155/2016/1806871