Japanese Journal of Applied Physics REGULAR PAPERS Improved hot-zone for manufacturing low-oxygen silicon ingots for passivated emitter and rear cell To cite this article: Sungsun Baik et al 2018 Jpn. J. Appl. Phys. 57 08RB02 View the article online for updates and enhancements. Related content Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer Gon-Sub Lee, Ki-Hoon Park, Jun Furukawa et al. - The effect of the ramping rate on oxygen precipitation and the denuded zone in Czochralskisilicon Yiying Zhao, Dongsheng Li, Xiangyang Ma et al. - Determination of Flow Pattern Defect Area by μ-Photoconductivity Decay Lifetime Measurement Bo-Young Lee, Don-Ha Hwang and Oh- Jong Kwon - This content was downloaded from IP address 207.241.231.83 on 04/05/2019 at 07:44