AIP Advances 10, 015116 (2020); https://doi.org/10.1063/1.5125784 10, 015116
© 2020 Author(s).
Electrical characterization of RuO
x
/n-
GaN Schottky diodes formed by oxidizing
ruthenium thin-films in normal laboratory
air
Cite as: AIP Advances 10, 015116 (2020); https://doi.org/10.1063/1.5125784
Submitted: 26 August 2019 . Accepted: 20 December 2019 . Published Online: 08 January 2020
Noah Allen, Timothy Ciarkowski, Eric Carlson , Amrita Chakraborty, and Louis Guido
COLLECTIONS
Paper published as part of the special topic on Chemical Physics, Energy, Fluids and Plasmas, Materials Science
and Mathematical Physics
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