Contents lists available at ScienceDirect Optik journal homepage: www.elsevier.com/locate/ijleo Original research article New modeling method for UV sensor photoelectrical parameters extraction Ahmed Bazine a,b , Dhouha Jemmeli a,b , Marwa Belhaj a , Chérif Dridi a, ⁎ a NANOMISENE Laboratory LR16CRMN01, Center for Research in Microelectronics and Nanotechnology of Sousse, Technopark of Sousse, B. P. 334, 4050 Sousse, Tunisia b University of Sousse, High School of Sciences and Technology of Hammam Sousse, 4011 Sousse, Tunisia ARTICLE INFO Keywords: Hybrid heterojunction Modeling UV sensor Photodetectors Photoelectrical properties ABSTRACT In this work, we have developed a new modeling tools based on physical, mathematical and numerical models for the analysis of UV-photodetectors based on ZnO NRs/PPV-C6 hybrid het- erojunctions. The photoelectrical equivalent circuit parameters are the series resistance (R s ), the shunt resistance (R p ), the reverse current density (J 0 ), the ideality factor (n) and the photocurrent density (J ph ). A combined physical-mathematical-numerical approach based on the modified Schockley model, the Lambert W function and the optimized method of the Root Mean Square error (RMSE) was applied to analyze the different devices performances. The results demonstrate that the incorporation of PPV-C6 polymer to the ZnO NRs structure leads to significant amelioration in the interface and increase of both the J ph and responsivity with a decrease of the R s . This kind of hybrid heterojunction based UV light sensor is promising for future low cost and high performance optoelectronic devices development. 1. Introduction Lately, researches have shown great attention in developing a sensitive and compact UV detector because it can be utilized in different field including civilian and military applications, environmental and biological research, astronomical studies, optical communication, and space applications [1]. Zinc oxide nanostructures such as nanowires, nanobelts and nanorods have testified an explosion of attention over the recent years because of the progress in their controlled synthesis and distinct optoelectronic, chemical, thermal, and mechanical properties, and they are extensively used in different optoelectronic devices such as light emitting diodes (LEDs), photovoltaic cells, and UV photodetectors [2–6]. ZnO nanorods also have great potential to work as nanoscale photo- detectors. Due to their bandgap of 3. 36 eV, these nanorods are appropriate for the detection of UV light. To enhance the photoresponse(responsivity) of the UV photodetectors, new ones based on ZnO/polymer with different device structures were performed [7–12]. Organic polymers have a lot of advantages, such as high absorption coefficient, variable band- width, low cost and excellent manufacturing performance. Poly(p-phenylenevinylene) (PPV) derivatives have always attracted widespread interest in the recent decade because of their good processability, film-forming property and thermal stability [13–15]. The performances of these devices are strongly linked to the precise knowledge of the photoelectrical parameters determined from experimental data. Therefore, the accuracy of the UV photodetectors modeling comes essentially from the mathematical models considered and the extraction parameters methods used. It is important to note that the J-V equation is an implicit non-linear transcendental function, which has no direct general https://doi.org/10.1016/j.ijleo.2018.12.171 Received 17 December 2018; Accepted 29 December 2018 ⁎ Corresponding author. E-mail address: cherif.dridi@crmn.rnrt.tn (C. Dridi). Optik - International Journal for Light and Electron Optics 181 (2019) 906–913 0030-4026/ © 2018 Elsevier GmbH. All rights reserved. T