Analysis of Polarization Charge on III-V Compound Materials for HEMT Devices May Nwe Myint Aye #1 , Than Htike Aung 2 , Win Zaw Hein 3 1,2,3 Department of Electronic Engineering, Mandalay Technological University Patheingyi 5071, Mandalay Region, Republic of the Union of Myanmar # Department of Electronic Engineering, Technological University (Lashio) Shan State, Republic of the Union of Myanmar. maynwemyintaye2018@gmail.com,thanhtikeaung85@gmail.com,winzawhein2007@gmail.com Abstract The paper presents the polarization charge analysis on III-V compound materials for HEMT Devices. The mathematical model for polarization charge analysis is derived from the experimental outcomes from the laboratory. The electron density in the channel of HEMT devices and the current versus polarization charges are demonstrated based on the numerical analysis. According to the numerical results, the results could be proved to fabricate the real devices in practical applications. The numerical analyses could be carried out by using MATLAB language. Keywords: Polarization Charge Analysis, III-V Compounds, HEMT Devices, Numerical Analysis, MATLAB Code Introduction While the most widespread application of III-V compound-based devices is in the fabrication of microwave power devices has attracted much attention because of large potential markets. The world market for transistors is divided between bipolar and field effect transistors, depending on application. For III-V compound-based devices applications there has been research into both Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs). State-of-the-art III-V compound-based HBTs generally still offer poor performance and typically has current gains of ~10. One researcher has achieved promising results with III-V compound-based Double Heterojunction Bipolar Transistors (DHBT) having current gains greater than 2000 and breakdown voltages above 50V. However, the progress made in HBTs has been very slow owing mostly to the poor acceptor activation in the base layer. As a result, most research has focused on field effect transistors with both Metal Semiconductor Field Effect Transistors (MESFETs) and HEMTs receiving considerable attention [1-5]. The HEMT is a heterojunction device with superior performance to its homojunction counterpart, the MESFET. The principle of operation in a HEMT is very similar to Metal Insulator Semiconductor Field Effect Transistor (MISFET). However, instead of carrying current in a thick channel, a HEMT relies on the formation of a two dimensional electron gas at the heterojunction interface [6-9]. Model A typical cross-sectional schematic of AlGaN/GaN HEMT device is shown in Figure 1. The device is usually grown on a semi-insulating substrate which has a high thermal stability and close lattice matching with GaN. A buffer layer is grown on top of the substrate to act as an isolation layer between the substrate and channel. Any lattice mismatching or IJRDO - Journal of Electrical and Electronics Engineering ISSN: 2456-6055 Volume-5 | Issue-7 | July,2019 31