Linearity and Reliability Analysis of an Electrically Doped Hetero Material Nanowire TFET CHITHRAJA RAJAN, 1,2 DIP PRAKASH SAMAJDAR, 1,3 JYOTI PATEL, 1,4 ANIL LODHI, 1,5 SUNEET KUMAR AGNIHOTRI, 1,6 DHEERAJ SHARMA, 1,7 and ATUL KUMAR 1,8 1.—PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. 2.—e-mail: rajan.chithraja@gmail.com. 3.—e-mail: dipprakash010@gmail.com. 4.—e-mail: jyotipatelec39@gmail.com. 5.—e-mail: lodhianil011@gmail.com. 6.—e-mail: suneet.agni@gmail.com. 7.—e-mail: dheeraj24482@gmail.com. 8.—e-mail: atul.kumar@ iiitdmj.ac.in Tunnel FET (TFET) has emerged as a small subthreshold swing (SS) and low OFF current device for power constraint applications. However, TFET faces low driving current and ambipolarity issues. Most research is focused on overcoming these issues, but there is a huge lack of quality checking of the devices. As the device dimensions are diminishing, it is difficult to maintain linearity and reliability of the devices with varying manufacture and envi- ronmental conditions. Considering the absence of physical junctions and random dopant fluctuations (RDF), we conducted a detailed linearity check-up of an electrically doped hetero material nanowire TFET (EDHM-NW-TFET). The main focus addressed here is on the sensitivity analysis of device linearity to mole fraction, drain underlapping and temperature variations. In terms of linearity, we found that mole fraction is a serious manufacturing issue as compared to drain underlapping change. Subsequently, as a reliability con- cern, it is shown that increasing temperature is unfavorable for I ON /I OFF ratio, SS and ambipolarity with a major shift in second harmonics. Key words: Heterojunctions, electrically doped, nano-wire TFET, linearity, reliability INTRODUCTION Short channel effects (SCEs) 1 in metal oxide semiconductor (MOS) devices beyond 45 nm created space for new technologies to emerge as transistor substitutes, with better gate control and restricted power leakage. Technologies like Tunnel FET (TFET) 2–4 have proven their worth many times as low power devices in which the transport of charge carriers is through direct band-to-band tunneling instead of thermionic emission. In addition, struc- tural modifications such as nanowire offer better gate controllability and, therefore, reduced sub- threshold swing (SS) 2 . Researchers have been working for some time on the improvement of TFET ON current and ambipolarity 3 . Engineering tech- niques such as bandgap modification, work function and dielectric adjustments 3–5 have improved TFET performance. However, when it comes to real-world applications, most researchers have not taken into consideration quality checking of the devices, focus- ing, in most cases, only on the betterment of electrical characteristics. Linearity and reliability are two important measures in evaluating device quality 6,7 . Other than SCEs, reduced technology nodes operate under a heavy load of maintaining precise doping, sharp geometric regions, fixed work function, and dielectric values because of limited fabrication methods that are likely to cause angular tilts, shadowing effects and lateral straggle 8–10 . These fluctuations generate non-linearities such as harmonics, intermodulation, desensitization and (Received October 16, 2019; accepted April 2, 2020) Journal of ELECTRONIC MATERIALS https://doi.org/10.1007/s11664-020-08143-5 Ó 2020 The Minerals, Metals & Materials Society