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Tris(ethyldimethylphenylammonium) nonahalogenodibismuthates(III)
H. Eickmeier, Bernd Jaschinski, A. Hepp, Jürgen Nuß, Hans Reuter, Roger Blachnik*
Institut für Chemie, Universität Osnabrück, Postfach 4469, D-49069 Osnabrück
Dedicated to Prof. Dr. Bernt Krebs on the occasion of his 60th birthday
Z. Naturforsch. 54 b, 305-313 (1999); received August 7, 1998
Bismuth, Tris(ethyldimethylphenylammonium) nonachlorodibismuthate, Tris(ethyldimethyl-
phenylammonium) nonabromodibismuthate, Tris(ethyldimethylphenylammonium) nonaiodo-
dibismuthate, Enthalpy of Transition
The halogenobismuthates Q 3Bi:X 9 (Q = EtMe2PhN; X = Cl, Br, I) were prepared by re
action of BiXi with EtMe->PhNX in ethanol. Single crystal structure determinations yielded:
[EtMe2PhNMBi 2Cl9], S.G. P2 , 2 , 2 ,, Nr. 19, a = 952.5(3), b = 1184.1(4), c = 3726.4(9 pm,
Z = 2;[EtMe.PhNMBi.Br 9]S.G.P2,/c, No. 14, a= 1839.4(4),6= 1329.5(3), c= 1817.3(6)pm,
ß = 92.68(3)°, Z = 4, [EtMe2PhN] 3[Bi2l 9], S.G. P2,/c, No. 14, a = 1915.3(2), b = 1379.0(3),
c = 1890.9(5) pm, ß = 92.48(1)°, Z = 4. The thermal behaviour was investigated with the aid
of DSC measurements and temperature dependent X-ray powder diffraction. All compounds
undergo a transition into a high temperature modification which could be obtained in case of
[EtMe2PhN] 3[Bi2Br9 _.vIv] in form of single crystals: S.G. P2|/c, Nr. 14, a = 1002.7(5), b =
1278.7 ( 8 ), c = 3584.3(5) pm, ß = 90.12(2)°, Z = 4. Surprisingly in this compound the iodine
atoms are not statistically distributed over all possible bromine positions, but occupy only
one position. Lattice parameters of the other high temperature modifications and enthalpies
of transition of the compounds are given. In addition a second iodobismuthate was isolated:
[EtMeoPhN]4[Bi6L2], S.G. Pi, Nr. 2 , with lattice parameters of a = 1343.4(3), b = 1554.3(3),
c = 2262.5(6) pm, a = 100.89(3)°, ß = 96.63(1)°, 7 = 98.94(2)° and Z = 2.
Introduction
Compounds with large second-order optical non-
linearities are of considerable interest because they
are potential electro-optical materials for applica
tions in telecommunication, optical computing and
data storage. Necessary condition for this property
is the crystallization in acentric space groups. Our
synthetic efforts in a search for such materials were
concentrated recently on argyrodites [1]. This class
is related to sillenites which also exhibit a strong
electro-optical activity [2], The structure of both
groups is determined by isolated anionic entities in
a cationic matrix. Similar building principles are
found in salts of the general formula Q/;Bi,„X„+ 3,„
(X = Cl, Br, I; Q = organylammonium cation). The
structures of these compounds consist of anionic
substructures built from distorted BiX63~ octahe-
dra, which are isolated or connected to oligomers
or polymers and embedded in a matrix of large
cations. These compounds can be prepared eas
ily and have low melting temperatures, thus being
* Reprint requests to Prof. Dr. Roger Blachnik.
model substances for high melting chalcogenides.
By variation of the group Q numerous compounds
of this type are possible.
In the hope to find electro-optical materials we
prepared salts of [Bi 2 X 9 ]3- (X = Cl, Br, I) with the
cation [EtMe2 PhN]+. Bismuth was chosen because
a statistical analysis of 23000 inorganic compounds
has revealed that its compounds crystallize more
than statistically in acentric space groups [3].
Experimental
Methods
Differential scanning calorimetry was carried out with
a Setaram Calorimeter DSC 92 (DSC) and a heating
rate of 2.5 K-1, thermogravimetric experiments with
a thermobalance (DuPont 951 TGA; TG). Temperature
and enthalpy calibrations were performed with the melt
ing points and enthalpies of indium and 1, 2 -dichloro-
ethane [4], The thermodynamic data were determined by
integration of the DSC signals.
Powder diffractograms were recorded with the aid of
a Stoe Stadi P-powder diffractometer (CuKcvi -radiation,
germanium-monochromator) at ambient and higher tem
peratures. For measurements below room temperature
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