Effects of interface disorder on transmission probability in magnetic multilayer
Julian Velev and William H. Butler
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831-6114, USA
and Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, USA
Received 8 August 2003; revised manuscript received 20 October 2003; published 13 January 2004
We present a study of conductance through disordered Fe-Cr100 and Co-Cu100 interfaces within a
realistic tight-binding model. In our model, the specular and diffuse parts of the conductance are treated on an
equal footing. We observe a substantial increase in conductance due to disorder in the channels that are
strongly reflected by pure interfaces. We also show how this phenomenon affects the giant magnetoresistance.
In addition, we find that the series resistor model may significantly overestimate the resistance if the thickness
of the disordered layer is less than several times the electron mean free path.
DOI: 10.1103/PhysRevB.69.024404 PACS numbers: 75.47.-m, 73.40.-c, 73.23.Ad
I. INTRODUCTION
The decade and a half following the discovery of the giant
magnetoresistance GMR in Fe-Cr multilayers,
1,2
has wit-
nessed a continuing growth of interest in spin-dependent
electron transport.
3–7
There have been numerous calculations
of GMR. Some of these have been based on a rigorous quan-
tum treatment of transport. Some have also taken into ac-
count the band structure of the materials comprising the
multilayer.
8
Direct comparison between calculations and ex-
periment, however, has been difficult because a number of
factors that are important in determining the experimental
resistance and magnetoresistance are difficult to take into
account in model calculations. These factors may roughly be
split in two groups: a finite temperature effects that lead to
inelastic scattering, most importantly phonon and magnon
scattering, and b effects of static disorder that lead to elas-
tic scattering.
In this paper, we are concerned with what we believe to
be an important subset of these factors, those involved with
substitutional disorder at the interfaces between different ma-
terials in magnetic multilayers. The study of the interfaces is
motivated by the fact that the effects of interfacial disorder
have been particularly difficult to understand and the fact
that interfaces can dramatically influence GMR.
9
In some
cases, interfacial disorder is the primary source of electron
scattering. The limitation to substitutional disorder is justi-
fied as a first step by the fact that atomic scale studies
10
of
interfaces of typical sputtered films produced for GMR de-
vices often show sufficiently strong texture that over an elec-
tron mean free path the films are well ordered crystals, the
crystal structure being maintained across the interfaces be-
tween the layers.
We study the effect of interfacial disorder by calculating
the effect of a random substitutional distribution of the
atomic species on one or more atomic layers at the interface
on transmission and reflection. We demonstrate that the su-
percell can be made large enough to suppress artifacts asso-
ciated with the artificial periodicity imposed by the supercell.
We also demonstrate that one or only a few configurations
are needed in order to represent the disorder.
We report both the specular ( k
conserving and diffuse
( k
nonconserving parts of the transmission and reflectance
because these help us to understand some novel effects
caused by interfacial disorder. A similar approach, based on
an ab initio LMTO code
11
was used in two recent papers.
12
In
the first, the conductance of a Co-Cu-Co trilayer was studied
in the presence of disorder in the bulk and close to the inter-
faces. The second study attempted to recover the simple re-
sistor model in order to compare with experiment. The au-
thors postulated that the scattering from bulk is completely
diffuse, and with this condition they were able to recover a
series resistor model and an explicit expression for the inter-
face resistance. In a very recent paper,
13
the same group cal-
culated the specular and diffuse part of the conductance
separately and managed to study the validity of the resistor
model used earlier. The LMTO code however, scales poorly
with the system size which limits their study to a few sys-
tems in just one disorder configuration.
Our code is based on a realistic tight-binding model fitted
to ab initio band structures which gives us more flexibility
with comparable precision. The fitting parameters consist of
on-site energies and interatomic matrix elements. These are
transferred to the alloy by assuming that the onsite energies
are not changed by the local environment and that the inter-
atomic matrix elements between species A and B is the av-
erage of that between A and A and between B and B. Clearly
this approach is limited to pairs of atoms of similar size and
electronegativity such as Fe-Cr and Co-Cu. We believe, how-
ever, that our approach is particularly well suited for explor-
ing certain questions of principle that are more difficult to
explore with fully ab initio techniques. We study the trans-
mission through Fe-Cr100 and Co-Cu100 interfaces and
GMR of Fe-Cr multilayers over the full range of substitu-
tional disorder.
II. MODEL
In this paper we employ the two current model which
neglects effects such as spin-orbit coupling or noncollinear
moments that might mix the spin channels and electron-
magnon scattering which may lead to spin-flip scattering.
The method we use to calculate the conductance was origi-
nally developed to study the conductance of nanowires.
14
For
PHYSICAL REVIEW B 69, 024404 2004
0163-1829/2004/692/0244047/$22.50 ©2004 The American Physical Society 69 024404-1