Atomic and electronic structures of Si(113)1  1-Sb surface: core-level shifts and surface states K.S. An a, * , C.C. Hwang b , Y.K. Kim c , E.S. Cho c , C.-Y. Park c , S. Pukird d , A. Kakizaki d , T. Okuda e , T. Kinoshita e a ThinFilmMaterialsLaboratory,KoreaResearchInstituteofChemicalTechnology(KRICT),Yuseung,P.O.Box107,Daejon305-600, South Korea b Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, South Korea c Department of Physics and BK21 Physics Research Division, Sung Kyun Kwan University, Suwon 440-746, South Korea d Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Oho 1-1, Tsukuba 305-0801, Japan e Synchrotron Radiation Laboratory, Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581, Japan Received 23 January 2002; accepted for publication 12 April 2002 Abstract Atomic and electronic structures of a Si(113)1  1-Sb surface are investigated by synchrotron-radiation photo- electron spectroscopy. The Si2p and Sb4d core levels as well as the valence band dispersions are measured. All the components of the Si2p core level spectrum related to the clean surface have been disappeared and one Sb-induced component could be identified at a higher binding energy of about þ0.17 eV with respect to the bulk component. The Sb4d core level spectrum is well represented by one doublet component, characteristic of Sb atoms adsorbed in an uniqueenvironment.Fortheelectronicstructureofthe1  1-Sbsurface,singlesurfacestatepositionedat1.1eVbelow the Fermi level at C, is recognized by angle-resolved photoemission spectroscopy and the dispersions has been mapped along the main symmetric directions in the surface Brillouin zone. The state shows a strong parabolic dispersion of about 0.95 eV along the [1 10] direction while, in the [33 1] direction, the state showed only small dispersion of about 0.35 eV. The 1  1-Sb surface shows a strong chemical passivation, which is due to the absence of the surface dangling bonds. In order to explain the results of the core level shifts, the band dispersions, and the surface inertness, simple structure model is suggested. Ó 2002 Elsevier Science B.V. All rights reserved. Keywords: Silicon;Antimony;Atom–solidreactions;Synchrotronradiationphotoelectronspectroscopy;Angleresolvedphotoemission 1. Introduction The interaction of antimony with Si surfaces has been the subject of much research in the last years. It has been well known that the interactions on low-index Si surfaces play an important role in interesting processes such as the epitaxy of III–V films,theformationofdelta-dopinglayers,andthe surfactant-mediated growth of SiGe films [1–4]. TheatomicandelectronicstructuresofseveralSb- induced reconstruction on the low-index Si sur- faces, such as Si(100)1  1 and 2  1-Sb [5–8], Surface Science 513 (2002) 49–56 www.elsevier.com/locate/susc * Corresponding author. Tel.: +82-42-8607356; fax: +82-42- 8614245. E-mail address: ksan@krict.re.kr (K.S. An). 0039-6028/02/$ - see front matter Ó 2002 Elsevier Science B.V. All rights reserved. PII:S0039-6028(02)01732-6