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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1
Dielectric Anisotropy Sensor Using
Coupled Resonators
Hector-Noel Morales-Lovera , Jose-Luis Olvera-Cervantes , Alonso Corona-Chavez , Senior Member, IEEE,
and Tejinder Kaur Kataria, Member, IEEE
Abstract—In this article, a new approach is proposed for
the measurement of the uniaxial anisotropic dielectric constant
of different planar samples by means of a single sensor. The
sensor is based on a couple of straight-line coupled resonators in
microstrip technology that can be excited in odd and even prop-
agation modes. This sensor is designed on an isotropic substrate
at the design frequency. Due to the electric field configuration
specific for each mode, it is possible to relate these modes to
the dielectric constant in two different directions (parallel and
perpendicular) of a dielectric material placed on top of the
sensor. This technique is used for the successful characterization
of the dielectric constant anisotropic of anisotropic dielectrics
(FR4, Rogers 4350B, and Arlon Diclad 880), and the isotropic
material PTFE.
Index Terms— Anisotropic, anisotropy, dielectric constant,
FR4, printed circuit board (PCB), sample under test (SUT),
uniaxial.
I. I NTRODUCTION
T
HE dielectric constant (ε
r
) is a measure of the dielectric
material response when an external electric field is
applied to it. In addition, the dielectric constant is related to
the speed of the electromagnetic (EM) wave in a material;
therefore, in transmission lines, such as microstrip lines, it is
a parameter related to the wavelength in the substrate, time
delay, characteristic impedance, among others [1]. For this
reason, the precise dielectric characterization of the materials
is of paramount importance to make reliable designs in the RF
and microwave range.
The dielectric anisotropy (different ε
r
for different direc-
tions) is a physical phenomenon caused by the macroscopic
characteristics in the structure of the material [2], [3], caus-
ing an EM wave in an anisotropic medium to feel differ-
ent propagation velocities in each direction. Consequently,
the dielectric anisotropy causes the propagation and scattering
characteristic to change according to the transmission line on
a specific substrate. Some of the modern dielectric materi-
als, such as FR4 and Rogers 4350B, are made of woven
fiberglass, embedded in epoxy. As a consequence of the
Manuscript received June 15, 2019; revised October 18, 2019; accepted
November 23, 2019. (Corresponding author: Jose-Luis Olvera-Cervantes.)
H.-N. Morales-Lovera, J.-L. Olvera-Cervantes, and A. Corona-Chavez
are with the Department of Electronics, Instituto Nacional de Astrofísica,
Óptica y Electrónica (INAOE), San Andrés Cholula 72840, Mexico (e-mail:
jolvera@inaoep.mx).
T. K. Kataria is with the Universidad de Guanajuato, Salamanca 36885,
Mexico.
Color versions of one or more of the figures in this article are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TMTT.2019.2958265
nonhomogeneity in their structure, these kinds of materials
are potentially anisotropic. They usually have a ε
r
for the
direction parallel to the surface (ε
k
) and a second in the
perpendicular direction (ε
⊥
). This phenomenon is known as
uniaxial anisotropy. Normally, substrates for printed circuit
board (PCB) are characterized by means of resonant pla-
nar circuits techniques, using striplines [4]. Nevertheless,
the method does not offer any information about substrate
dielectric anisotropy.
In the literature, some works can be found focusing on
dielectric anisotropic characterization. Nonresonant methods
determine the dielectric constant by means of the impedance
and the propagation constant of a transmission line as in
[5] and [6]. In [5], the anisotropy is determined from the
measurement of the phase constant and a rigorous analysis of
the spectral domain of the scatter characteristics of microstrip
lines. On the other hand, in [6], it is shown how different
configurations of the fiberglass fabric in the FR4 substrate
influence the scatter characteristics of microstrip lines.
The advantage of the nonresonant method is that ε
r
can be
determined over a wide range of frequencies, but its accuracy
and sensitivity are usually low, and tests are often destructive.
On the other hand, resonant methods offer greater accuracy
and sensitivity, but ε
r
can be known only at a single frequency
(resonance frequency) or multiples of it.
Resonant methods include the cavity perturbation method
and the planar circuit method [7]. In the cavity perturbation
method [8], [9], the sample under test (SUT) is introduced
into the cavity, and placed in a region of maximum con-
centration of electric field, and ε
r
is determined from the
change in the cavity resonances properties when the sample
is introduced. In [8], the TE
112
mode is used to measure the
uniaxial dielectric constant; this mode has electric field lines
perpendicular to each other, which allows to determine the ε
k
and ε
⊥
separately, selecting the corresponding mode by means
of fine metallic needles. In [9], a two-resonator method is used
with different propagation modes in each of them, measuring
ε
k
with a resonator where the TE
011
mode propagates, and ε
⊥
with another resonator where the TM
010
mode is excited.
In the planar circuit method, resonators are designed on a
substrate to determine the dielectric characteristics of the mate-
rial, relating the physical length of the resonator to the resonant
frequency, and thus, deduct the ε
r
. Coupled resonators in
microstrip and stripline technology (called RA resonators) are
used in [10] and [11] to determine ε
r
in the horizontal and
vertical direction of the substrate where the resonator was
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