processes
Article
Adsorption and Reaction Mechanisms of Direct Palladium
Synthesis by ALD Using Pd(hfac)
2
and Ozone on
Si (100) Surface
Chunyu Cheng, Yiming Zou, Jiahui Li, Amanda Jiamin Ong , Ronn Goei , Jingfeng Huang , Shuzhou Li *
and Alfred Iing Yoong Tok *
Citation: Cheng, C.; Zou, Y.; Li, J.;
Ong, A.J.; Goei, R.; Huang, J.; Li, S.;
Tok, A.I.Y. Adsorption and Reaction
Mechanisms of Direct Palladium
Synthesis by ALD Using Pd(hfac)
2
and Ozone on Si (100) Surface.
Processes 2021, 9, 2246. https://
doi.org/10.3390/pr9122246
Academic Editor: Gianvito Vilé
Received: 4 November 2021
Accepted: 26 November 2021
Published: 13 December 2021
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School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore;
chunyu.cheng@ntu.edu.sg (C.C.); yiming004@ntu.edu.sg (Y.Z.); jiahui.li@ntu.edu.sg (J.L.);
jiamin.ong@ntu.edu.sg (A.J.O.); ronn_goei@ntu.edu.sg (R.G.); huang_jingfeng@rp.edu.sg (J.H.)
* Correspondence: lisz@ntu.edu.sg (S.L.); miytok@ntu.edu.sg (A.I.Y.T.)
Abstract: Palladium nanoparticles made by atomic layer deposition (ALD) normally involve formalde-
hyde or H
2
as a reducing agent. Since formaldehyde is toxic and H
2
is explosive, it is advantageous
to remove this reducing step during the fabrication of palladium metal by ALD. In this work we
have successfully used Pd(hfac)
2
and ozone directly to prepare palladium nanoparticles, without the
use of reducing or annealing agents. Density functional theory (DFT) was employed to explore the
reaction mechanisms of palladium metal formation in this process. DFT results show that Pd(hfac)
2
dissociatively chemisorbed to form Pd(hfac)* and hfac* on the Si (100) surface. Subsequently, an O
atom of the ozone could cleave the C–C bond of Pd(hfac)* to form Pd* with a low activation barrier
of 0.46 eV. An O atom of the ozone could also be inserted into the hfac* to form Pd(hfac-O)* with a
lower activation barrier of 0.29 eV. With more ozone, the C–C bond of Pd(hfac-O)* could be broken
to produce Pd* with an activation barrier of 0.42 eV. The ozone could also chemisorb on the Pd
atom of Pd(hfac-O)* to form O
3
-Pd(hfac-O)*, which could separate into O-Pd(hfac-O)* with a high
activation barrier of 0.83 eV. Besides, the activation barrier was 0.64 eV for Pd* that was directly
oxidized to PdOx by ozone. Based on activation barriers from DFT calculations, it was possible to
prepare palladium without reducing steps when ALD conditions were carefully controlled, especially
the ozone parameters, as shown by our experimental results. The mechanisms of this approach could
be used to prepare other noble metals by ALD without reducing/annealing agents.
Keywords: DFT study; palladium; ozone; atomic layer deposition
1. Introduction
Atomic layer deposition (ALD) is widely used in many fields, owing to the fact that
the large and complex 3D film surfaces can be used to grow nanoparticles uniformally
and conformally over them. This can be done with precise control of the film thickness
and nanoparticle size [1–3], where the films and nanoparticles chemisorb on the substrate
surface with a strong binding. Many noble metals at the nanoscale have been synthesized
successfully by ALD [4–8]. Among them, palladium has a wide range of applications
at the nanoscale for catalysts [9,10], hydrogen storage [11–13], and sensors [14–16]. It is
desirable in most of the applications to prepare uniform and conformal palladium particles
on complex surfaces to improve palladium content per unit volume [17–19]. Elam et al. [20]
have reported a method to nucleate and grow palladium directly on the surface of Al
2
O
3
using Pd(hfac)
2
(hfac = hexafluoroacetylacetone) and formalin (the aqueous solution of
formaldehyde) by ALD. Weber et al. [21] have prepared palladium particles with high
purity and low resistivity at 100~200
◦
C using Pd(hfac)
2
and H
2
plasma followed by
an O
2
plasma step, where the O
2
plasma step was necessary to remove hydrocarbon
fragments on the surface that remained after the H
2
plasma step. Since formaldehyde is
Processes 2021, 9, 2246. https://doi.org/10.3390/pr9122246 https://www.mdpi.com/journal/processes